Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots

2009 ◽  
Vol 311 (3) ◽  
pp. 773-775 ◽  
Author(s):  
M. Dhamrin ◽  
T. Saitoh ◽  
I. Yamaga ◽  
K. Kamisako
Author(s):  
Mariia S. Koroleva ◽  
Aleksei G. Krasnov ◽  
Anatoliy Senyshyn ◽  
Alexander Schökel ◽  
Igor R. Shein ◽  
...  

1994 ◽  
Vol 369 ◽  
Author(s):  
Igor Kosacki ◽  
Harry L. Tuller

The results of electrical conductivity measurements on Nb, W, and Mn-doped Gd2Ti2O7 are presented. A correlation between electrical conductivity, the oxygen partial pressure and type of dopants has been obtained. The source of the different PO2 dependence for Mn-doped material is discussed.


2017 ◽  
Author(s):  
Sandhya K. ◽  
Chitra Priya N. S. ◽  
Aswathy P. K. ◽  
Deepthi N. Rajendran ◽  
Praveen Thappily

2007 ◽  
Vol 336-338 ◽  
pp. 793-795 ◽  
Author(s):  
Hui Ming Ji ◽  
Xiao Chuan Liu ◽  
Ying Lv ◽  
Cui Xia Li ◽  
Xiao Dong Chen

The electrical properties and microstructures of SrTiO3 based voltage-sensing and dielectric dual-functional ceramics with nanometer donor and acceptor additives were studied. The La2O3 nanopowders and MnO-SiO2-Al2O3 (or CuO-SiO2-Al2O3) nano-composite powders were incorporated into SrTiO3 as donor, acceptor and liquid-phase sintering aids. Then semiconducting SrTiO3-based ceramics were sintered at 1360-1440oC for 2 h in a reducing atmosphere. The effects of the nanometer donor and acceptor additives and the sintering temperature on the electrical properties and microstructures of materials were discussed. The results showed that SrTiO3-based varistor ceramics with 1.1 mol% La2O3 and 0.1 mol% MnO nano-additives sintered at 1360-1420oC in graphite and N2 reducing atmosphere have excellent voltage-sensing and dielectric characteristics. The varistor voltage ranges from 2.3 to 5.3 V/mm, the nonlinear coefficient from 3.0 to 3.8, and the dielectric constant from 215,600 to 413,000.


2018 ◽  
Vol 44 (8) ◽  
pp. 9215-9220 ◽  
Author(s):  
Jian-Hui Zhu ◽  
Jian-Qing Dai ◽  
Jie-Wang Xu ◽  
Xiao-Ya Li

2021 ◽  
Vol 11 (4) ◽  
pp. 12215-12226

Undoped, Cerium (Ce) doped, Manganese (Mn) doped and Ce-Mn co-doped Barium Titanate (BaTiO3) with the general formula Ba1-xCexMnyTi1-yO3 (where x = 0.00, 0.01, 0.02, 0.03, y = 0.00; x = 0.00, y =0.01, 0.02, 0.03; and x = y = 0.01, 0.02,0.03) were synthesized by solid-state reaction method and sintered at 1200 C for 4 hr with an aim to study their structural and electrical properties. The grain size of the samples has been estimated using the Scanning Electron Microscopy (SEM). The X-ray Diffraction (XRD) analysis indicates that the structure of the Ce-doped and Ce-Mn co-doped BaTiO3 is cubic. However, the undoped BaTiO3 and Mn-doped BaTiO3 confirmed the tetragonal-cubic mixed phases. With the change of doping concentrations, the positions of different peaks shifted slightly. The lattice parameter varied irregularly with increasing doping concentration because of Mn's changeable valency. EDX spectra confirmed the presence of Ba, Ti, Ce, and Mn contents in the co-doped samples with stoichiometric ratio. Crystallinity is observed to be clearly increased when Ce-Mn is co-doped in BaTiO3. J-V characteristic curves indicate transition from conducting to semiconducting nature for the doped and co-doped samples with the increase in temperature. The dielectric constant of the samples increases up to 4500 with the doping concentration. The higher values of dielectric constant are observed for the 2% Mn-doped and 1% Ce-Mn co-doped samples compared to the other undoped samples. For the undoped and Mn-doped samples, constant dielectric values increase with temperature but decrease for the Ce-doped and Ce-Mn co-doped samples. It is inferred that co-doping of BaTiO3 with Ce and Mn would be beneficial and economical for its applications.


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