Growth of Cu2O thin films with high hole mobility by introducing a low-temperature buffer layer

2009 ◽  
Vol 311 (4) ◽  
pp. 1102-1105 ◽  
Author(s):  
B.S. Li ◽  
K. Akimoto ◽  
A. Shen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Buffer Layer ◽  
Hole Mobility ◽  
Cu2o Thin Films

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Cu2O thin films obtained at low temperature by mono-ethanolamine decomposition in open atmosphere

2018 ◽  
Vol 85 ◽  
pp. 168-176 ◽  
Author(s):  
M.A. Badillo-Ávila ◽  
R. Castanedo-Pérez ◽  
M.A. Villarreal-Andrade ◽  
G. Torres-Delgado
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Open Atmosphere ◽  
Cu2o Thin Films ◽  
Mono Ethanolamine

scholarly journals Single-crystalline Cu2O thin films of optical quality as obtained by the oxidation of single-crystal Cu thin films at low temperature

APL Materials ◽  
2019 ◽  
Vol 7 (3) ◽  
pp. 031115 ◽  
Author(s):  
Taewoo Ha ◽  
Inhee Park ◽  
Kyung Ik Sim ◽  
Howon Lee ◽  
Jong-Sung Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Single Crystal ◽  
Optical Quality ◽  
Single Crystalline ◽  
Cu2o Thin Films

Low-Temperature Electrodeposition of Cu2O Thin Films: Modulation of Micro-Nanostructure by Modifying the Applied Potential and Electrolytic Bath pH

2009 ◽  
Vol 113 (45) ◽  
pp. 19482-19487 ◽  
Author(s):  
S. Bijani ◽  
L. Martínez ◽  
M. Gabás ◽  
E. A. Dalchiele ◽  
J.-R. Ramos-Barrado
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Applied Potential ◽  
Electrolytic Bath ◽  
Cu2o Thin Films

scholarly journals Hole mobility improvement in Cu2O thin films prepared by the mist CVD method

2019 ◽  
Vol 12 (5) ◽  
pp. 055509 ◽  
Author(s):  
Takumi Ikenoue ◽  
Toshikazu Kawai ◽  
Ryo Wakashima ◽  
Masao Miyake ◽  
Tetsuji Hirato
Keyword(s):  
Thin Films ◽  
Hole Mobility ◽  
Cvd Method ◽  
Cu2o Thin Films
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