Epitaxial growth of cubic Mg0.45Zn0.55O thin films on SrTiO3 (001) substrate with MgO buffer layer

2013 ◽  
Vol 377 ◽  
pp. 78-81 ◽  
Author(s):  
Dapeng Zhu ◽  
Li Cai ◽  
Shumin He ◽  
Guolei Liu ◽  
Shishen Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer

Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer

2004 ◽  
Vol 264 (1-3) ◽  
pp. 463-467 ◽  
Author(s):  
D. Akai ◽  
K. Hirabayashi ◽  
M. Yokawa ◽  
K. Sawada ◽  
M. Ishida
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Si Substrates

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

2019 ◽  
Vol 494 ◽  
pp. 644-650 ◽  
Author(s):  
Wen-Cheng Ke ◽  
Zhong-Yi Liang ◽  
Solomun Teklahymanot Tesfay ◽  
Chih-Yung Chiang ◽  
Cheng-Yi Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer

2002 ◽  
Vol 80 (13) ◽  
pp. 2323-2325 ◽  
Author(s):  
H. Wang ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer

Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)m buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth

2008 ◽  
Vol 516 (17) ◽  
pp. 5842-5846 ◽  
Author(s):  
Takayoshi Katase ◽  
Kenji Nomura ◽  
Hiromichi Ohta ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Epitaxial Thin Films ◽  
Lattice Matched

scholarly journals Scalable Epitaxial Growth of WSe2 Thin Films on SiO2/Si via a Self-Assembled PtSe2 Buffer Layer

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Pei-Chen Wu ◽  
Chun-Liang Yang ◽  
Yuanmin Du ◽  
Chih-Huang Lai
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Self Assembled

Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth

1998 ◽  
Vol 211 (1) ◽  
pp. 141-151 ◽  
Author(s):  
Dong Soo Paik ◽  
A. V. Prasada Rao ◽  
S. Komarneni
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sol Gel ◽  
Pzt Thin Films
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