Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

2019 ◽  
Vol 494 ◽  
pp. 644-650 ◽  
Author(s):  
Wen-Cheng Ke ◽  
Zhong-Yi Liang ◽  
Solomun Teklahymanot Tesfay ◽  
Chih-Yung Chiang ◽  
Cheng-Yi Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

scholarly journals Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

2010 ◽  
Vol 46 (6) ◽  
pp. 1606-1612 ◽  
Author(s):  
S. Çörekçi ◽  
M. K. Öztürk ◽  
A. Bengi ◽  
M. Çakmak ◽  
S. Özçelik ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

Effects of PLT-buffer layer on microstructures of sputtered PLZT thin films epitaxially grown on sapphire

1994 ◽  
Vol 9 (11) ◽  
pp. 2959-2967 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Toshifumi Satoh ◽  
Kenji Tabata ◽  
Hideaki Adachi ◽  
Yasumufi Yabuuchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Crystal Orientation ◽  
Interfacial Region ◽  
Plzt Thin Film ◽  
Plzt Thin Films

The microstructures of sputtered thin films of lead-lanthanum zirconate-titanate (PLZT) on (0001) sapphire substrate have been studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Thin films of polycrystalline PLZT (9/65/35), Pb0.91La0.09Zr0.65Ti0.35O3, were prepared on a (0001) sapphire substrate by reactive sputtering, using the dc-magnetron system with a multitarget, Pb, La, Zr, and Ti at the substrate temperature of 700 °C. The PLZT thin films comprised (111) oriented small crystallites of PLZT. Although the average direction of the crystal orientation corresponded to the ideal epitaxial relationship (111) PLZT ‖ (0001) sapphire, the individual crystallites showed misalignment in both the growth direction and the film plane. The thin films could not be considered epitaxially grown films. From analysis of the TEM images, there exists an interfacial region between the PLZT thin film and the substrate. The interfacial region comprises ordered clusters of (111), disordered (101), and/or (110) PLZT crystallites. The presence of the interfacial region will suppress ideal epitaxial growth with uniform crystal orientation. It is confirmed that the addition of the buffer layer of graded composition of PLT-PLZT, between the substrate and the PLZT thin film, will suppress the formation of the disordered interfacial region and will enhance the epitaxial growth of the (111) PLZT on (0001) sapphire with three-dimensional crystal orientations.

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

2015 ◽  
Vol 11 (3) ◽  
pp. 352-359 ◽  
Author(s):  
Tien-Tung Luong ◽  
Binh Tinh Tran ◽  
Yen-Teng Ho ◽  
Ting-Wei Wei ◽  
Yue-Han Wu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition

2021 ◽  
Vol 39 (3) ◽  
pp. 032401
Author(s):  
Maximilian Kolhep ◽  
Cheng Sun ◽  
Jürgen Bläsing ◽  
Björn Christian ◽  
Margit Zacharias
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Aln Buffer

scholarly journals Epitaxial growth and characterization of Cu thin films deposited on Al2O3(0001) substrates by magnetron sputtering

2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Aln Buffer
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