Growth of low etch pit density ZnGeP2 crystals by the modified vertical Bridgman method

2013 ◽  
Vol 383 ◽  
pp. 79-83 ◽  
Author(s):  
Liang Shen ◽  
Biao Wang ◽  
Dong Wu ◽  
Zhongxing Jiao
Keyword(s):  
Bridgman Method ◽  
Etch Pit Density ◽  
Vertical Bridgman Method ◽  
Etch Pit ◽  
Vertical Bridgman

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

2014 ◽  
Author(s):  
Chang-Bao HUANG ◽  
You-Bao NI ◽  
Hai-Xin WU ◽  
Zhen-You WANG ◽  
Xu-Dong CHENG ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

The Influence of Gravity on Eutectic PbSn Alloy Grown by the Vertical Bridgman Method

2016 ◽  
Vol 869 ◽  
pp. 637-642
Author(s):  
Rafael Cardoso Toledo ◽  
Chen Y. An ◽  
Irajá Newton Bandeira ◽  
Filipe Estevão de Freitas
Keyword(s):  
Eutectic Alloy ◽  
Thermal Gradient ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman ◽  
Composition Profiles ◽  
Buoyancy Driven Convection ◽  
Gravity Acceleration

Composition profiles of eutectic alloy Pb25.9Sn74.1 atomic % grown by the normal and inverted Bridgman methods are presented and the study of the solute alloy redistribution is made. The inverted vertical Bridgman method, where the solidification occurs from the top to the bottom of the melt under a destabilizing thermal gradient, allows the growth of crystals with buoyancy-driven convection different from that with the usual vertical Bridgman configuration. The scope of this work is to study the influence of the gravity acceleration in the convection process.

Crystal growth and characterization of Cd0.8Mn0.2Te using Vertical Bridgman method

2008 ◽  
Vol 43 (5) ◽  
pp. 1239-1245 ◽  
Author(s):  
Jijun Zhang ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Dongmei Zeng ◽  
Shuying Ma ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

Synthesis and Bridgman Growth of Ga2S3 Crystals

2016 ◽  
Vol 683 ◽  
pp. 71-76 ◽  
Author(s):  
Konstantin Kokh ◽  
Ivan N. Lapin ◽  
Valery Svetlichnyi ◽  
Perizat Galiyeva ◽  
Askar Bakhadur ◽  
...  
Keyword(s):  
Phase Transition ◽  
Solution Method ◽  
Damage Threshold ◽  
Chemical Transport ◽  
Bridgman Method ◽  
Monoclinic Structure ◽  
High Quality ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman ◽  
Transport Method

In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 μm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications.

Spectroscopic properties of OH− doped and Bi-rich Bi4Ge3O12 crystals by vertical Bridgman method

2011 ◽  
Vol 131 (8) ◽  
pp. 1608-1611 ◽  
Author(s):  
Pingsheng Yu ◽  
Liangbi Su ◽  
Hengyu Zhao ◽  
Xin Guo ◽  
Hongjun Li ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

Thermoelectric Properties of Pb1-xCdxSe Crystals Grown by Vertical Bridgman Method

2012 ◽  
Vol 194 ◽  
pp. 148-152
Author(s):  
Horng Jyh Gau ◽  
Yih Jye Chiou ◽  
Ching Cherng Wu ◽  
Yung Kang Kuo ◽  
Ching Hwa Ho
Keyword(s):  
Figure Of Merit ◽  
Carrier Transport ◽  
Sem Analysis ◽  
Bridgman Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman Method ◽  
Temperature Dependences ◽  
Type Semiconductor ◽  
Vertical Bridgman

Single crystals of Pb1-xCdxSe compounds with x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, SEM and electron-probe microanalysis (EPMA). The thermoelectric behaviors for the Pb1-xCdxSe crystals were studied by means of thermal and carrier transport measurements in the temperature range between 50K and 400K. X-ray diffraction and SEM analysis confirmed that as-grown Pb1-xCdxSe crystals are simgle phase. The experimental results showed that the PbTe sample is p-type semiconductor but Pb1-xCdxSe samples with x = 0.01, 0.03, 0.05, 0.07 and 0.1 are n-type semiconductors. Temperature dependences of resistivity, Seebeck coefficient, and thermal conductivity for the various compositions of Pb1-xCdxSe were analyzed. The dimensionless thermoelectric figure of merit ZT for these compounds was evaluated and discussed. It was found that Pb0.95Cd0.05Se exhibits the best thermoelectric performance. The maximum figure of merit (ZT) of Pb0.95Cd0.05Se is about 0.47 at 290 K.

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