Catalyst-free growth of InP nanowires on patterned Si (001) substrate by using GaAs buffer layer

2016 ◽  
Vol 440 ◽  
pp. 81-85 ◽  
Author(s):  
Shiyan Li ◽  
Xuliang Zhou ◽  
Xiangting Kong ◽  
Mengke Li ◽  
Junping Mi ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Catalyst Free ◽  
Gaas Buffer Layer ◽  
Free Growth

From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

2007 ◽  
Vol 91 (25) ◽  
pp. 251902 ◽  
Author(s):  
R. Songmuang ◽  
O. Landré ◽  
B. Daudin
Keyword(s):  
Buffer Layer ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Aln Buffer

Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

1996 ◽  
Vol 286 (1-2) ◽  
pp. 107-110 ◽  
Author(s):  
Ching-Ting Lee ◽  
Chi-Yu Wang ◽  
Yeong-Chang Chou
Keyword(s):  
Buffer Layer ◽  
Layer Function ◽  
Gaas Buffer Layer

Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

2011 ◽  
Vol 99 (25) ◽  
pp. 251910 ◽  
Author(s):  
X. J. Chen ◽  
B. Gayral ◽  
D. Sam-Giao ◽  
C. Bougerol ◽  
C. Durand ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Optical Quality ◽  
Vapor Phase Epitaxy ◽  
High Optical Quality ◽  
Organic Vapor ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Metal Organic ◽  
Free Growth

scholarly journals Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Patterned Substrates ◽  
High Quality ◽  
Liquid Phase Epitaxial ◽  
Gaas Buffer Layer ◽  
Liquid Phase Epitaxial Growth

Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

2020 ◽  
Vol 90 (2) ◽  
pp. 20301
Author(s):  
Ilkay Demir ◽  
Ahmet Emre Kasapoğlu ◽  
Hasan Feyzi Budak ◽  
Emre Gür ◽  
Sezai Elagoz
Keyword(s):  
Buffer Layer ◽  
Growth Parameters ◽  
Internal Quantum Efficiency ◽  
Optical Quality ◽  
Structural Quality ◽  
Atomic Step ◽  
Organic Vapor ◽  
Gaas Buffer Layer ◽  
Metal Organic ◽  
Low Temperature Gaas

We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 °C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75 nm are considered, the epilayer grown on the 25 nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).

The structure and property characteristics of Mn-doped SiGe alloy nanowires prepared by catalyst-free growth

2019 ◽  
Vol 575 ◽  
pp. 411696
Author(s):  
Xi Zhang ◽  
Jianglin Wei ◽  
Gang Xiang ◽  
Li Lei ◽  
Dingyu Yang ◽  
...  
Keyword(s):  
Structure And Property ◽  
Catalyst Free ◽  
Sige Alloy ◽  
Alloy Nanowires ◽  
Free Growth ◽  
Mn Doped
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