Influences of thickness and temperature of low temperature GaAs buffer layer on two-step MOVPE grown GaAs/Ge heterostructures

2020 ◽  
Vol 90 (2) ◽  
pp. 20301
Author(s):  
Ilkay Demir ◽  
Ahmet Emre Kasapoğlu ◽  
Hasan Feyzi Budak ◽  
Emre Gür ◽  
Sezai Elagoz
Keyword(s):  
Buffer Layer ◽  
Growth Parameters ◽  
Internal Quantum Efficiency ◽  
Optical Quality ◽  
Structural Quality ◽  
Atomic Step ◽  
Organic Vapor ◽  
Gaas Buffer Layer ◽  
Metal Organic ◽  
Low Temperature Gaas

We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickness on the structural, morphological, crystalline and optical quality of metal organic vapor phase epitaxy (MOVPE) grown heterostructures of GaAs on Ge. It was found that the optimal BL conditions significantly decrease the effects of anti-phase boundaries (APBs) even when grown on offcut Ge substrate by two-step growth technique with AsH3 pre-flow to promote double atomic step formation. It is observed that as the growth temperature increases, the growth rate of the GaAs BL increases, too. Improvement on the structural quality is observed up to BLs temperature of 535 °C, then it decreases. On the other hand, as the different thick BLs, 12, 25, 75 nm are considered, the epilayer grown on the 25 nm thick BL has shown the lowest full width at half maximum (FWHM) value, large photoluminescence peak intensity and internal quantum efficiency (IQE).

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

2011 ◽  
Vol 99 (25) ◽  
pp. 251910 ◽  
Author(s):  
X. J. Chen ◽  
B. Gayral ◽  
D. Sam-Giao ◽  
C. Bougerol ◽  
C. Durand ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Optical Quality ◽  
Vapor Phase Epitaxy ◽  
High Optical Quality ◽  
Organic Vapor ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Metal Organic ◽  
Free Growth

Improved MOCVD Growth of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
R.M. Lum ◽  
J.K. Klingert ◽  
B.A. Davidson ◽  
M.G. Lamont
Keyword(s):  
Buffer Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Growth Parameters ◽  
Buffer Layers ◽  
Double Crystal ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Gaas Films ◽  
Gaas Buffer Layer ◽  
Direct Growth

ABSTRACTIn the direct growth of GaAs on Si by MOCVD the overall quality of the heteroepitaxial film is controlled to a large extent by the growth parameters of the initial GaAs buffer layer. We have investigated the structural properties of this layer using Rutherford Backscattering Spectrometry (RBS) and X-ray double crystal diffractometry. The crystallinity of the buffer layer was observed to improve with increasing layer thickness in the range 10–100nm, and then to rapidly degrade for thicker layers. High temperature (750°C) annealing of the buffer layers resulted in considerable reordering of all but the thicker (>200 nm) layers. Alteration of the usual GaAs/Si growth sequence to include an in-situ anneal of the buffer layer after growth interruption yielded GaAs films with improved structural, optical and electrical properties.

Improvement of the Structural Quality of GaAs Layers Grown on Si with LT-GaAs Intermediate Layer

1993 ◽  
Vol 325 ◽  
Author(s):  
Zuzanna Liliental Weber ◽  
H. Fujioka ◽  
H. Sohn ◽  
E.R. Weber
Keyword(s):  
Schottky Diodes ◽  
Gaas Layer ◽  
Optical Quality ◽  
Structural Quality ◽  
Photoluminescence Intensity ◽  
Dislocation Interaction ◽  
Gaas Buffer Layer ◽  
Order Of Magnitude ◽  
Lt Gaas

AbstractSuperior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.

scholarly journals Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yN Quantum Structures

2007 ◽  
Vol 2007 ◽  
pp. 1-6 ◽  
Author(s):  
A. Gröning ◽  
V. Pérez-Solórzano ◽  
M. Jetter ◽  
H. Schweizer
Keyword(s):  
Growth Parameters ◽  
Growth Conditions ◽  
Localized States ◽  
Time Resolved ◽  
Organic Vapor ◽  
Growth Interruption ◽  
Metal Organic ◽  
Low Dimensional ◽  
Time Resolved Photoluminescence ◽  
State Filling

The optical properties of metal-organic vapor phase epitaxy grown AlyInxGa1−x−yN quantum dot structures have been studied by time-resolved photoluminescence experiments. We investigated the recombination dynamics of the photo-exited carriers in dependence of the growth parameters such as aluminium flow and the duration of the growth interruption after the dot deposition. Our results confirm the presence of localized states, where the degree of localization is strongly dependent on the growth conditions. To describe this behavior, we propose a band structure with coupled potentials for these nanostructures. Finally, we demonstrate state filling to prove the zero-dimensional character of the strongly localized states in our quaternary quantum dots.

Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE

2000 ◽  
Vol 648 ◽  
Author(s):  
Philipp Kröner ◽  
Horst Baumeister ◽  
Roland Gessner ◽  
Josef Rieger ◽  
Michael Schier ◽  
...  
Keyword(s):  
Quantum Well ◽  
Growth Parameters ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic ◽  
Modulator Structure ◽  
Butt Coupling

AbstractLateral integration of optoelectronic devices comprising strained multiple quantum well (MQW) structures can most successfully be accomplished by selective area epitaxy using metal organic molecular beam epitaxy (MOMBE). We optimized the growth parameters with respect to a planar butt coupling and sharp, flat MQW interfaces in an integrated MQW laser / MQW modulator structure. Defect generation in metal organic vapor phase epitaxy (MOVPE) overgrown cladding layers is analyzed and shown to contain information about the quality of the buried butt coupling. A ridge waveguide structure has successfully been fabricated from an optimized integrated laser / modulator structure.

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