Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed

We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3×105 (cm-2), The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the + and – c directions, resulting in a Na concentration of 4.2 × 1014 (cm-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

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Fabrication of GaN crystals with low threading dislocation density and low resistivity by thin flux growth in the Na-flux point seed technique

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab7156 ◽

2020 ◽

Vol 59 (3) ◽

pp. 035501

Author(s):

Kiyoto Endo ◽

Masayuki Imanishi ◽

Hitoshi Kubo ◽

Takumi Yamada ◽

Kosuke Murakami ◽

...

Keyword(s):

Dislocation Density ◽

Flux Growth ◽

Threading Dislocation ◽

Low Resistivity ◽

Threading Dislocation Density ◽

Point Seed

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Low dislocation density AlN on sapphire prepared by double sputtering and annealing

Applied Physics Express ◽

10.35848/1882-0786/ababec ◽

2020 ◽

Vol 13 (9) ◽

pp. 095501

Author(s):

Ding Wang ◽

Kenjiro Uesugi ◽

Shiyu Xiao ◽

Kenji Norimatsu ◽

Hideto Miyake

Keyword(s):

Dislocation Density ◽

Low Dislocation Density

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Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method

10.1117/12.961978 ◽

1989 ◽

Cited By ~ 13

Author(s):

M. Tatsumi ◽

T. Kawase ◽

T. Araki ◽

N. Yamabayashi ◽

T. Iwasaki ◽

...

Keyword(s):

Dislocation Density ◽

Single Crystals ◽

Low Dislocation Density

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Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

Applied Physics Letters ◽

10.1063/1.2405880 ◽

2006 ◽

Vol 89 (25) ◽

pp. 251109 ◽

Cited By ~ 16

Author(s):

Te-Chung Wang ◽

Tien-Chang Lu ◽

Tsung-Shine Ko ◽

Hao-Chung Kuo ◽

Min Yu ◽

...

Keyword(s):

Dislocation Density ◽

Epitaxial Lateral Overgrowth ◽

Lateral Overgrowth ◽

Low Dislocation Density

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Low dislocation density MBE process for CdTe-on-GaSb as an alternative substrate for HgCdTe growth

Infrared Physics & Technology ◽

10.1016/j.infrared.2018.05.010 ◽

2018 ◽

Vol 92 ◽

pp. 96-102 ◽

Cited By ~ 9

Author(s):

W. Lei ◽

Y.L. Ren ◽

I. Madni ◽

L. Faraone

Keyword(s):

Dislocation Density ◽

Alternative Substrate ◽

Low Dislocation Density

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Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates

MRS Proceedings ◽

10.1557/proc-639-g5.7 ◽

2000 ◽

Vol 639 ◽

Cited By ~ 1

Author(s):

T. Detchprohm ◽

M. Yano ◽

R. Nakamura ◽

S. Sano ◽

S. Mochiduki ◽

...

Keyword(s):

Dislocation Density ◽

New Method ◽

Growth Technique ◽

New Approach ◽

Density Area ◽

Low Dislocation Density ◽

Dislocation Densities ◽

Movpe Growth

ABSTRACTWe have developed a new method to prepare low-dislocation-density GaN by using periodically grooved substrates in a conventional MOVPE growth technique. This new approach was demonstrated for GaN grown on periodically grooved α-Al2O3(0001), 6H-SiC(0001)Si and Si(111) substrates. Dislocation densities were 2×107 cm−2 in low-dislocation-density area.

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Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Laser Chemistry ◽

10.1155/2010/140976 ◽

2010 ◽

Vol 2010 ◽

pp. 1-27 ◽

Cited By ~ 21

Author(s):

Michael Lorenz ◽

Holger Hochmuth ◽

Christoph Grüner ◽

Helena Hilmer ◽

Alexander Lajn ◽

...

Keyword(s):

Thin Film ◽

Dislocation Density ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Chemical Vapor ◽

Laser Deposition ◽

Oxide Thin Film ◽

Organic Chemical ◽

Large Area ◽

Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

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