Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth

2017 ◽  
Vol 478 ◽  
pp. 174-179 ◽  
Author(s):  
Kohei Ohtomo ◽  
Nana Matsumoto ◽  
Koji Ashida ◽  
Tadaaki Kaneko ◽  
Noboru Ohtani ◽  
...  
Keyword(s):  
Single Crystals ◽  
Basal Plane ◽  
Stacking Faults ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Nitrogen Doped

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 311-314 ◽  
Author(s):  
Masakazu Katsuno ◽  
Noboru Ohtani ◽  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hirokatsu Yashiro ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Basal Plane ◽  
Selective Etching ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
High Concentration ◽  
X Ray ◽  
Nitrogen Doped ◽  
Low Resistivity

Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 1019 cm-3 concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.

Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport

2006 ◽  
Vol 45 (3A) ◽  
pp. 1738-1742 ◽  
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Hiroshi Tsuge ◽  
Tatsuo Fujimoto ◽  
Masashi Nakabayashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Crystals ◽  
Basal Plane ◽  
Vapor Transport ◽  
Physical Vapor Transport

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

2003 ◽  
Vol 433-436 ◽  
pp. 91-94 ◽  
Author(s):  
H. J. Rost ◽  
K. Irmscher ◽  
J. Doerschel ◽  
D. Siche ◽  
D. Schulz ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Nitrogen Doped

Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
Keyword(s):  
Single Crystals ◽  
Knoop Hardness ◽  
Vapor Transport ◽  
Physical Vapor Transport

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

2009 ◽  
Vol 311 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hiroshi Tsuge ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Nitrogen Doped

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique
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