Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

2009 ◽  
Vol 311 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hiroshi Tsuge ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Nitrogen Doped

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 311-314 ◽  
Author(s):  
Masakazu Katsuno ◽  
Noboru Ohtani ◽  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hirokatsu Yashiro ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Basal Plane ◽  
Selective Etching ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
High Concentration ◽  
X Ray ◽  
Nitrogen Doped ◽  
Low Resistivity

Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of dislocations is discussed particularly in terms of their glide motion in the presence of a high concentration of nitrogen. The results indicate that nitrogen impurities up to mid 1019 cm-3 concentration do not show any discernible influence on the glide behavior of basal plane dislocations (BPDs) in 4H-SiC crystals grown by physical vapor transport (PVT) method.

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

2003 ◽  
Vol 433-436 ◽  
pp. 91-94 ◽  
Author(s):  
H. J. Rost ◽  
K. Irmscher ◽  
J. Doerschel ◽  
D. Siche ◽  
D. Schulz ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Nitrogen Doped

Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
Keyword(s):  
Single Crystals ◽  
Knoop Hardness ◽  
Vapor Transport ◽  
Physical Vapor Transport

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

2004 ◽  
Vol 457-460 ◽  
pp. 55-58 ◽  
Author(s):  
Peter J. Wellmann ◽  
Z.G. Herro ◽  
Sakwe Aloysius Sakwe ◽  
Pierre M. Masri ◽  
M.V. Bogdanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport
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