Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography

2018 ◽  
Vol 499 ◽  
pp. 24-29 ◽  
Author(s):  
Masashi Sonoda ◽  
Takahiro Nakano ◽  
Kentaro Shioura ◽  
Naoto Shinagawa ◽  
Noboru Ohtani
Keyword(s):  
Structural Characterization ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

Structural Characterization of CF-PVT Grown Bulk 3C-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 67-70 ◽  
Author(s):  
Alkyoni Mantzari ◽  
Frédéric Mercier ◽  
Maher Soueidan ◽  
Didier Chaussende ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Properties ◽  
Structural Characterization ◽  
Stacking Faults ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transmission Electron ◽  
Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

Sublimation Growth and Defect Characterization of AlN Single Crystals

2007 ◽  
Vol 1040 ◽  
Author(s):  
Shaoping Wang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Zaiyuan Ren ◽  
Jung Han ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Defect Characterization ◽  
Growth Technique ◽  
X Ray ◽  
Sublimation Growth ◽  
Growth Experiments

AbstractIn this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

Structural Characterization of SiC Crystals Grown by Physical Vapor Transport

1998 ◽  
Vol 264-268 ◽  
pp. 433-436
Author(s):  
Edward M. Sanchez ◽  
V.D. Heydemann ◽  
Gregory S. Rohrer ◽  
Marek Skowronski ◽  
J. Solomon ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Vapor Transport ◽  
Physical Vapor Transport

New horizons for the structural characterization of stainless steel slags by X-ray powder diffraction

2007 ◽  
Vol 2007 (suppl_26) ◽  
pp. 61-66 ◽  
Author(s):  
B. Peplinski ◽  
B. Adamczyk ◽  
G. Kley ◽  
K. Adam ◽  
F. Emmerling ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Powder Diffraction ◽  
Structural Characterization ◽  
X Ray ◽  
New Horizons

scholarly journals Structural Characterization of Heterodinuclear ZnII-LnIII Complexes (Ln = Pr, Nd) with a Ring-Contracted H2valdien-Derived Schiff Base Ligand

2021 ◽  
Author(s):  
Shabana Noor ◽  
Richard Goddard ◽  
Fehmeeda Khatoon ◽  
Sarvendra Kumar ◽  
Rüdiger W. Seidel
Keyword(s):  
Molecular Structure ◽  
Schiff Base ◽  
Structural Characterization ◽  
Schiff Base Ligand ◽  
Crystal And Molecular Structure ◽  
X Ray ◽  
X Ray Crystallography ◽  
Imidazoline Ring

AbstractSynthesis and structural characterization of two heterodinuclear ZnII-LnIII complexes with the formula [ZnLn(HL)(µ-OAc)(NO3)2(H2O)x(MeOH)1-x]NO3 · n H2O · n MeOH [Ln = Pr (1), Nd (2)] and the crystal and molecular structure of [ZnNd(HL)(µ-OAc)(NO3)2(H2O)] [ZnNd(HL)(OAc)(NO3)2(H2O)](NO3)2 · n H2O · n MeOH (3) are reported. The asymmetrical compartmental ligand (E)-2-(1-(2-((2-hydroxy-3-methoxybenzylidene)amino)-ethyl)imidazolidin-2-yl)-6-methoxyphenol (H2L) is formed from N1,N3-bis(3-methoxysalicylidene)diethylenetriamine (H2valdien) through intramolecular aminal formation, resulting in a peripheral imidazoline ring. The structures of 1–3 were revealed by X-ray crystallography. The smaller ZnII ion occupies the inner N2O2 compartment of the ligand, whereas the larger and more oxophilic LnIII ions are found in the outer O2O2’ site. Graphic Abstract Synthesis and structural characterization of two heterodinuclear ZnII-LnIII complexes (Ln = Pr, Nd) bearing an asymmetrical compartmental ligand formed in situ from N1,N3-bis(3-methoxysalicylidene)diethylenetriamine (H2valdien) through intramolecular aminal formation are reported.

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