Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method
Keyword(s):
X Ray
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The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.
2018 ◽
Vol 499
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pp. 24-29
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Keyword(s):
Keyword(s):
Strain and defect structure of iron implanted In0.53Ga0.47As using high-resolution X-ray diffraction
2005 ◽
Vol 239
(4)
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pp. 414-418
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2013 ◽
Vol 96
(6)
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pp. 1951-1957
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