Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

2020 ◽  
Vol 548 ◽  
pp. 125847 ◽  
Author(s):  
Damir Borovac ◽  
Wei Sun ◽  
Matthew R. Peart ◽  
Renbo Song ◽  
Jonathan J. Wierer ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

High‐speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor‐phase epitaxy

1986 ◽  
Vol 60 (7) ◽  
pp. 2609-2612 ◽  
Author(s):  
V. D. Mattera ◽  
F. Capasso ◽  
J. Allam ◽  
A. L. Hutchinson ◽  
J. Dick ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Avalanche Photodiodes ◽  
Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

2015 ◽  
Vol 12 (4-5) ◽  
pp. 341-344
Author(s):  
Alexander Polyakov ◽  
Nikolai Smirnov ◽  
Anatoli Govorkov ◽  
Elena Kozhukhova ◽  
Tatiana Yugova ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Trap ◽  
Vapor Phase Epitaxy ◽  
Trap Density ◽  
Hydride Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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