High‐speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor‐phase epitaxy

1986 ◽  
Vol 60 (7) ◽  
pp. 2609-2612 ◽  
Author(s):  
V. D. Mattera ◽  
F. Capasso ◽  
J. Allam ◽  
A. L. Hutchinson ◽  
J. Dick ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Avalanche Photodiodes ◽  
Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

2020 ◽  
Vol 548 ◽  
pp. 125847 ◽  
Author(s):  
Damir Borovac ◽  
Wei Sun ◽  
Matthew R. Peart ◽  
Renbo Song ◽  
Jonathan J. Wierer ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

2015 ◽  
Vol 12 (4-5) ◽  
pp. 341-344
Author(s):  
Alexander Polyakov ◽  
Nikolai Smirnov ◽  
Anatoli Govorkov ◽  
Elena Kozhukhova ◽  
Tatiana Yugova ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Trap ◽  
Vapor Phase Epitaxy ◽  
Trap Density ◽  
Hydride Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy

1989 ◽  
Vol 36 (2) ◽  
pp. 256-262 ◽  
Author(s):  
A. Antreasyan ◽  
P.A. Garbinski ◽  
V.D. Mattera ◽  
M.D. Feuer ◽  
H. Temkin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Enhancement Mode

High Speed Ga0.47In0.53As MISFETs Grown by Metal Organic Vapor Phase Epitaxy

ESSDERC ’89 ◽  
1989 ◽  
pp. 267-270
Author(s):  
J. Splettstößer ◽  
F. Schulte ◽  
A. Trasser ◽  
D. Schmitz ◽  
H. Beneking
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

High-speed epitaxial growth of AlN above by hydride vapor phase epitaxy

2007 ◽  
Vol 300 (1) ◽  
pp. 42-44 ◽  
Author(s):  
Toru Nagashima ◽  
Manabu Harada ◽  
Hiroyuki Yanagi ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes

1986 ◽  
Vol 77 (1-3) ◽  
pp. 558-563 ◽  
Author(s):  
K.W. Carey ◽  
S.Y. Wang ◽  
R. Hull ◽  
J.E. Turner ◽  
D. Oertel ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1039
Author(s):  
Kazukuni Hara ◽  
Shigeyuki Takaki ◽  
Shinichi Tanishita ◽  
Daisuke Uematsu ◽  
Yuto Hoshino ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers

scholarly journals Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 2, No. 11B) ◽  
pp. L1321-L1324 ◽  
Author(s):  
Fu-Hsiang Yang ◽  
Jih-Sheng Hwang ◽  
Ying-Jay Yang ◽  
Kuei-Hsien Chen ◽  
Jih-Hsiang Wang
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

High-speed enhancement mode InP MISFETs grown by Chloride vapor phase epitaxy

1987 ◽  
Author(s):  
A. Antreasyan ◽  
P.A. Garbinski ◽  
V.D. Mattera ◽  
H. Temkin ◽  
J.H. Abeles ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Enhancement Mode

High‐speed InP/InGaAsP metal‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

1989 ◽  
Vol 54 (2) ◽  
pp. 176-178
Author(s):  
A. Antreasyan ◽  
P. A. Garbinski ◽  
V. D. Mattera ◽  
M. D. Feuer ◽  
J. Filipe ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Vapor Phase Epitaxy
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