Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness

Applying KP theory combined with deformation potential we obtained the valence band structure, and based on this result we calculated the orientation-dependent effective mass which is also called conductivity effective mass in strained Si1-xGex/(001)Si in this research, and furthermore ,we established the scattering rate model by using the density-of-states effective mass. On the basis of conductivity effective mass and scattering rate model, utilizing analytical method and relaxation time approximation we obtained the dependence of the value of hole mobility on stress and doping concentration in strained Si1-xGex/(001)Si along different crystal orientations. Compare to the unstrained Si, the anisotropy of hole mobility is more obvious in strained Si1-xGex/(001)Si, for example, It shows that under the same stress and doping concentration (Ni=1x1014cm-3, x=0.4), the value of hole mobility along [010] crystal orientation is visibly higher than other crystal orientations. This result can provide valuable references to the research of hole mobility of strained Si1-xGex materials and the design of devices.

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Strained Silicon On Insulator wafers made by the Smart Cut™ technology

MRS Proceedings ◽

10.1557/proc-809-b2.3 ◽

2004 ◽

Vol 809 ◽

Cited By ~ 1

Author(s):

B. Ghyselen ◽

Y. Bogumilowicz ◽

C. Aulnette ◽

A. Abbadie ◽

B. Osternaud ◽

...

Keyword(s):

Thin Films ◽

Hole Mobility ◽

Silicon On Insulator ◽

Strained Silicon ◽

Layer Transfer ◽

Strained Si ◽

Engineered Substrates

ABSTRACTStrained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications.

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.895871 ◽

2007 ◽

Vol 54 (6) ◽

pp. 1394-1401 ◽

Cited By ~ 7

Author(s):

Qiuxia Xu ◽

Xiaofeng Duan ◽

Haihua Liu ◽

Zhengsheng Han ◽

Tianchun Ye

Keyword(s):

Low Cost ◽

Hole Mobility ◽

Gate Length ◽

Strained Si

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

IEEE Electron Device Letters ◽

10.1109/55.841305 ◽

2000 ◽

Vol 21 (5) ◽

pp. 230-232 ◽

Cited By ~ 172

Author(s):

T. Mizuno ◽

S. Takagi ◽

N. Sugiyama ◽

H. Satake ◽

A. Kurobe ◽

...

Keyword(s):

Hole Mobility ◽

Strained Si

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E-kRelation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained

Advances in Condensed Matter Physics ◽

10.1155/2014/686303 ◽

2014 ◽

Vol 2014 ◽

pp. 1-9

Author(s):

Zhang Chao ◽

Xu Da-Qing ◽

Liu Shu-Lin ◽

Liu Ning-Zhuang

Keyword(s):

Valence Band ◽

Theoretical Basis ◽

Carrier Mobility ◽

Energy Levels ◽

Hole Mobility ◽

Strained Si ◽

Effective Masses ◽

Splitting Energy ◽

Analytic Models ◽

Strained Materials

Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. TheE-krelation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, theE-krelation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design.

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