Kinetics of Cr(III) ions discharge in solutions based on a deep eutectic solvent (ethaline): Effect of water addition

2020 ◽  
Vol 864 ◽  
pp. 114086
Author(s):  
V.S. Protsenko ◽  
L.S. Bobrova ◽  
A.A. Kityk ◽  
F.I. Danilov
Keyword(s):  
Deep Eutectic Solvent ◽  
Water Addition ◽  
Effect Of Water ◽  
Kinetics Of

Effect of water addition on the cure kinetics of an epoxy-amine thermoset

2011 ◽  
Vol 49 (21) ◽  
pp. 4650-4659 ◽  
Author(s):  
Sungwon Choi ◽  
Andrew P. Janisse ◽  
Changhua Liu ◽  
Elliot P. Douglas
Keyword(s):  
Cure Kinetics ◽  
Water Addition ◽  
Effect Of Water ◽  
Epoxy Amine ◽  
Kinetics Of

Effect of Water Addition during Preparation on the Early-Time Photodynamics of CH3 NH3 PbI3 Perovskite Layers

ChemPhysChem ◽  
2017 ◽  
Vol 18 (23) ◽  
pp. 3320-3324 ◽  
Author(s):  
S. Aphrham ◽  
Q. Pan ◽  
S. F. Zaccarine ◽  
K. M. Felter ◽  
J. Thieme ◽  
...  
Keyword(s):  
Early Time ◽  
Water Addition ◽  
Effect Of Water

Effect of water addition on the coupling of homopolymers by click chemistry

2010 ◽  
Vol 48 (22) ◽  
pp. 4922-4928 ◽  
Author(s):  
Zhilei Liu ◽  
Jiwen Hu ◽  
Jianping Sun ◽  
Guojun Liu
Keyword(s):  
Click Chemistry ◽  
Water Addition ◽  
Effect Of Water

Reaction Kinetics of Poly-Si Etching in TMAH Solution

2021 ◽  
Vol 314 ◽  
pp. 60-65
Author(s):  
Taegun Park ◽  
Sangwoo Lim
Keyword(s):  
Reaction Kinetics ◽  
Alkaline Solution ◽  
Etching Rate ◽  
Tetramethylammonium Hydroxide ◽  
Dissolved Gas ◽  
Metal Free ◽  
Effect Of Water ◽  
Detailed Kinetics ◽  
Kinetics Of ◽  
Tmah Solution

Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study. The effect of water and TMAH concentration on the etching kinetics of poly-Si was investigated by using various concentrations of TMAH solution. It is found that H2O in TMAH solution plays an important role in etching poly-Si. Presence of dissolved CO2 and O2 in TMAH solution tends to inhibit etching of poly-Si. The concentration of dissolved CO2 and O2 in TMAH were reduced by Ar bubbling, thereby the poly-Si etching rate increased.

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