Transparent highly oriented 3C-SiC bulks by halide laser CVD

2018 ◽  
Vol 38 (9) ◽  
pp. 3057-3063 ◽  
Author(s):  
Hong Cheng ◽  
Meijun Yang ◽  
Youfeng Lai ◽  
Mingwei Hu ◽  
Qizhong Li ◽  
...  
Keyword(s):  
2015 ◽  
Vol 63 (3) ◽  
pp. 123-127 ◽  
Author(s):  
Hirokazu KATSUI ◽  
Yuki KUMAGAI ◽  
Takashi GOTO

1999 ◽  
Vol 348 (1-2) ◽  
pp. 63-68 ◽  
Author(s):  
Akio Watanabe ◽  
Yoji Imai

2012 ◽  
Vol 508 ◽  
pp. 3-6 ◽  
Author(s):  
Kadokura Hokuto ◽  
Akihiko Ito ◽  
Teiichi Kimura ◽  
Takashi Goto

Α-Al2O3 Films Were Prepared by Laser Chemical Vapor Deposition and the Effects of Precursor Evaporation Temperature (Tvap) and Oxygen Gas Flow Rate (FRo) on Phase and Orientation of Al2o3 Films Were Investigated. at Tvap = 413 K, (100)-Oriented α-Al2O3 and θ-Al2O3 Were Codeposited. the Amount of θ-Al2O3 Increased with Increasing FRo. at Tvap = 433–443 K, α-Al2O3 Films Showed a (001) Orientation. (100)- and (001)-Oriented α-Al2O3 Films Had a Rectangular- and Hexagonal-Shaped Grains, Respectively, and Showed a Columnar in Cross Section. Grain Size of (100)- and (001)-Oriented α-Al2O3 Films Decreased from 10 to 2 μm with Increasing FRo from 0.085 to 0.85 Pa m3 s−1. Deposition Rate Increased from 100 to 300 μm h−1 with Increasing Tvap from 413 to 443 K.


1992 ◽  
Vol 54 ◽  
pp. 108-111 ◽  
Author(s):  
P. González ◽  
E. García ◽  
J. Pou ◽  
D. Fernández ◽  
B. León ◽  
...  

1987 ◽  
Vol 101 ◽  
Author(s):  
Hirohide Nakamatsu ◽  
Kazuhiko Hirata ◽  
Shichio Kawai

ABSTRACTArF exciraer laser CVD was performed to give epitaxial SiC films on the sapphire or (α-A12O3 (0001) substrate. The rate of film growth was limited by the diffusion of the supplied gases. Small amounts of the gas supply failed to produce the SiC deposition and etched the substrate. The UV light irradiation of the substrate was necessary for the photo-excitation to grow the adherent epitaxial films. Filtered UV light from a D2 lamp revealed that the light with the wavelength shorter than about 310nm was effective for the epitaxial growth. It was found to be essential to excite intermediate products or by-products in the absorbed layer on the substrate. The epitaxial SiC films on the αA12O3 gave blue photoluminescence which may be ascribed to the superstructure of 3C-type SiC crystals.


1997 ◽  
Vol 108 (2) ◽  
pp. 257-262 ◽  
Author(s):  
P.B. Kargl ◽  
N. Arnold ◽  
D. Bäuerle
Keyword(s):  

1995 ◽  
Vol 397 ◽  
Author(s):  
J.L. Maxwell ◽  
J. Pegna ◽  
D.A. Deangelis ◽  
D.V. Messia

ABSTRACTA systematic study of the composition of Ni-Fe steel microstructures grown from iron pentacarbonyl and nickel tetracarbonyl by direct laser-induced pyrolysis is presented. The partial pressures of both precursors were varied from 2 to 40 mbar, resulting in needles of iron, nickel, and iron-nickel alloys. An Ar+ laser was employed at incident powers of 100 to 600 mW. Auger Spectroscopy and a microprobe were used to determine the composition of the needles vs. partial pressure and laser power. Composition was also measured along the length of the rods to determine temperature changes during needle growth. This latter effect is useful in modelling the heat flow mechanisms during 3-dimensional laser CVD, as the threshold decomposition temperatures of Fe(CO)5 and Ni(CO)4 differ and the composition of the rods affects their thermal conductivity. In some iron samples, periodic banded structures were observed along the length of the rods, indicative of periodic melting. Axial deposition rates were also measured relative to laser power density, and rates up to 40 μm/s were achieved. Photolysis in the gas phase was observed for the iron-nickel carbonyl mixture, and was largely eliminated with a high-pass UV filter at 420nm. Additional disassociation of the carbonyl groups produced carbon soot near the reaction zone, but only for high nickel carbonyl concentrations. Convective cooling of the needles during growth was determined to be the primary heat transfer mechanism.


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