scholarly journals Exploring point defects and trap states in undoped SrTiO3 single crystals

Author(s):  
Matthäus Siebenhofer ◽  
Federico Baiutti ◽  
Juan de Dios Sirvent ◽  
Tobias M. Huber ◽  
Alexander Viernstein ◽  
...  
1992 ◽  
Vol 262 ◽  
Author(s):  
K. Terashima ◽  
E. Toklzaki ◽  
H. Kondo ◽  
S. Tanigawa ◽  
A. Uedono ◽  
...  

ABSTRACTBulk ZnSe single crystals were grown by annealing a CVD grown polycrystalline ingot in a selenium atmosphere for two weeks at 1000°C. To identify the defect structures closely related to the observed grain growth, point defects in bulk ZnSe were subsequently investigated using the positron annihilation technique. A striking result has been obtained; the selenium interstitial type defects were dominantly observed in the crystals grown under a selenium ambient. The fraction of annihilations from the trap states at selenium interstitial type defects in ZnSe increased with increasing the selenium pressure in the annealing ampoule. These results indicated that selenium interstitial type defects enhanced the atomic migration in the crystal and strongly assisted the recrystallization by dislocation climb.


Author(s):  
Galina M. Kuz’micheva ◽  
Liudmila. I. Ivleva ◽  
Irina A. Kaurova ◽  
Evgeny V. Khramov ◽  
Victor B. Rybakov ◽  
...  

1982 ◽  
Vol 60 (2) ◽  
pp. 201-204 ◽  
Author(s):  
S. Kupca ◽  
D. P. Kerr ◽  
B. G. Hogg ◽  
Z. S. Basinski

Positron lifetimes have been measured in an isochronal annealing study of dynamically fatigued, high purity Cu single crystals. Decomposition of the lifetime spectra into two components results in a description of the annealing process in terms of the lifetime and fraction of trapped positrons. Positron lifetimes were also determined at a series of low temperatures (10–300 K) at different stages of annealing. The lifetime of positrons trapped at point defects is found to vary with temperature indicating that a description of the trapping process according to a simple diffusion limited model is not applicable.


Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1208
Author(s):  
Valeria Murgulov ◽  
Catherine Schweinle ◽  
Michael Daub ◽  
Harald Hillebrecht ◽  
Michael Fiederle ◽  
...  

A recent publication on single crystals of two-dimensional, layered organic–inorganic (BA)2CsAgBiBr7 double perovskite (BA+ = ) suggested the great potential of this semiconductor material in the detection of X-ray radiation. Our powder XRD measurement confirms the crystallinity and purity of all samples that crystallise in the monoclinic space group , while the single crystal XRD measurements reveal the dominant {001} lattice planes. The structure–property relationship is reflected in the lower resistivity values determined from the van der Pauw measurements (1.65–9.16 × 1010 Ωcm) compared to those determined from the IV measurements (4.19 × 1011–2.67 × 1012 Ωcm). The density of trap states and charge-carrier mobilities, which are determined from the IV measurements, are 1.12–1.76 × 1011 cm–3 and 10−5–10−4 cm2V–1s–1, respectively. The X-ray photoresponse measurements indicate that the (BA)2CsAgBiBr7 samples synthesised in this study satisfy the requirements for radiation sensors. Further advances in crystal growth are required to reduce the density of defects and improve the performance of single crystals.


1969 ◽  
Vol 24 (3) ◽  
pp. 332-336 ◽  
Author(s):  
M Mehring ◽  
O Kanert

Abstract The spin echo line shapes of Rb87 and Br79.81 have been measured in undeformed and plasti­cally deformed RbBr single crystals. Analysis of the line shape of the measured echoes shows that the quadrupolar part of the echoes is given by point defects in the case of undeformed crystals, whereas in deformed crystals this term is determined by dislocations. A quantitative evaluation of the width of the quadrupolar shape yields the mean dislocation density in the samples as a function of the shear stress acting during the deformation. It was found that the square root of the dislocation density is proportional to the shear stress.


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