Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing

2014 ◽  
Vol 146 ◽  
pp. 382-386 ◽  
Author(s):  
Pengfei Yu ◽  
Wanqi Jie
Keyword(s):  
Single Crystals ◽  
High Resistivity

Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals

2010 ◽  
Vol 1246 ◽  
Author(s):  
Avinash Gupta ◽  
Ping Wu ◽  
Varatharajan Rengarajan ◽  
Xueping Xu ◽  
Murugesu Yoganathan ◽  
...  
Keyword(s):  
Single Crystals ◽  
Growth Process ◽  
Large Diameter ◽  
Commercial Production ◽  
High Resistivity ◽  
Steady Growth ◽  
Vanadium Doping ◽  
Low Capacitance ◽  
Very High

AbstractSiC single crystals are grown at II-VI by the seeded sublimation technique. The process has been scaled up and optimized to support commercial production of high-quality 100 mm diameter, Semi-Insulating (SI) 6H substrates and 100 mm 4H n+ substrates. The growth process incorporates special elements aimed at achieving uniform sublimation of the source, steady growth rate, uniform doping and reduced presence of background impurities.Semi-insulating 6H substrates are produced using precise vanadium compensation. Vanadium doping is optimized to yield SI material with very high resistivity and low capacitance.Crystal quality of the substrates is evaluated using a wide variety of techniques. Specific defects, their interaction and evolution during growth are described with emphasis on micropipes and dislocations. The current quality of the 6H SI and 4H n+ crystals grown at II-VI is summarized.

The Analysis of the Magnetorefractive Effect in La 0.7Ca0.3Mno3: Thin Films and Single Crystals

2012 ◽  
Vol 190 ◽  
pp. 381-384 ◽  
Author(s):  
A.N. Yurasov ◽  
T.N. Bakhvalova ◽  
A.V. Telegin ◽  
Yu.P. Sukhorukov ◽  
A.B. Granovsky
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
High Resistivity ◽  
Infrared Range ◽  
Reflection And Transmission ◽  
Transmission Modes ◽  
Infrared Spectral ◽  
Effective Medium Approach ◽  
Middle Infrared ◽  
Magnetorefractive Effect

Recently, it has been shown that the magnetorefractive effect in reflection and transmission modes in La0.7Ca0.3MnO3 manganite thin films and single crystals can reach several percents for single crystals and up to 20-40% for thin films in the middle infrared spectral range near the Curie temperature. In the present paper, to explain these data we used the effective medium approach and supposed that La 0.7Ca 0.3MnO3 manganites consist of low and high resistivity phases with volume fractions depending on an applied magnetic field. It is shown that the magnetorefractive effect spectra strongly depend on magnetoresistance and optical properties of manganites in the infrared range.

Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals

1995 ◽  
Vol 378 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Single Crystals ◽  
Deep Levels ◽  
High Resistivity ◽  
Admittance Spectroscopy ◽  
Donor Level ◽  
Decay Kinetics ◽  
Exponential Form ◽  
Conductance Peak ◽  
P Type ◽  
Kinetics Of

AbstractDeep levels in high resistivity p-type 6H-SiC has been studied using optical admittance spectroscopy ( OAS ). Besides the conductance peak due to the band to band transitions, there are three conductance peaks in the spectra of most of the samples. The conductance peak due to the vanadium donor (0/+) level at EV+ 1.55 eV is identified. The persistent photoconductance (PPC) at this defect was also studied. The decay kinetics of the PPC follow the stretched exponential form. The potential barrier against recapture of carriers was determined to be 220 meV for the vanadium donor level.

PHOTOCONDUCTIVITY IN CUPROUS OXIDE SINGLE CRYSTALS

1962 ◽  
Vol 40 (12) ◽  
pp. 1703-1713 ◽  
Author(s):  
Emery Fortin ◽  
Frank L. Weichman
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Cuprous Oxide ◽  
Low Temperatures ◽  
Surface Recombination ◽  
High Resistivity ◽  
Material Surface ◽  
Conductivity Measurements ◽  
Small Temperature ◽  
Significant Difference

Measurements were made on both single and multicrystalline samples of Cu2O of high resistivity. Conductivity measurements gave three activation energies, 1.0, 0.5, and 0.027 ev, for different temperature regions. The photoconductivity at constant temperatures as a function of wavelength as well as the photoconductivity as a function of temperature at constant wavelengths were measured. Over the temperature range investigated no significant difference was found between single and multicrystalline material. Surface recombination states are postulated to explain the very small temperature dependence at low temperatures.

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