Optical property analysis of high-resistivity CZT:In single crystals before and after annealing

2014 ◽  
Vol 36 (7) ◽  
pp. 1213-1218 ◽  
Author(s):  
Pengfei Yu ◽  
Wanqi Jie
Keyword(s):  
Optical Property ◽  
Single Crystals ◽  
High Resistivity ◽  
Property Analysis ◽  
Before And After

Study of optical properties of high-resistivity CdMnTe:In single crystals before and after H2 atmosphere annealing

2019 ◽  
Vol 246 ◽  
pp. 120-126 ◽  
Author(s):  
Pengfei Yu ◽  
Yongren Chen ◽  
Jie Song ◽  
Yi Zhu ◽  
Meijing Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
High Resistivity ◽  
Before And After

The stability of dislocation networks under various oxygen-doping conditions in superconducting Bi2Sr2CaCu2Oy single crystals and their influence on the flux pinning properties

1994 ◽  
Vol 52 ◽  
pp. 802-803
Author(s):  
Y. Feng ◽  
X. Y. Cai ◽  
R. J. Kelley ◽  
D. C. Larbalestier
Keyword(s):  
Single Crystals ◽  
Oxygen Content ◽  
Basal Plane ◽  
Flux Pinning ◽  
Pinning Centers ◽  
Before And After ◽  
Anomalous Peak ◽  
Basal Plane Dislocation ◽  
The Stability ◽  
Further Development

The issue of strong flux pinning is crucial to the further development of high critical current density Bi-Sr-Ca-Cu-O (BSCCO) superconductors in conductor-like applications, yet the pinning mechanisms are still much debated. Anomalous peaks in the M-H (magnetization vs. magnetic field) loops are commonly observed in Bi2Sr2CaCu2Oy (Bi-2212) single crystals. Oxygen vacancies may be effective flux pinning centers in BSCCO, as has been found in YBCO. However, it has also been proposed that basal-plane dislocation networks also act as effective pinning centers. Yang et al. proposed that the characteristic scale of the basal-plane dislocation networksmay strongly depend on oxygen content and the anomalous peak in the M-H loop at ˜20-30K may be due tothe flux pinning of decoupled two-dimensional pancake vortices by the dislocation networks. In light of this, we have performed an insitu observation on the dislocation networks precisely at the same region before and after annealing in air, vacuumand oxygen, in order to verify whether the dislocation networks change with varying oxygen content Inall cases, we have not found any noticeable changes in dislocation structure, regardless of the drastic changes in Tc and the anomalous magnetization. Therefore, it does not appear that the anomalous peak in the M-H loops is controlled by the basal-plane dislocation networks.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

X-ray diffraction study of BaTiO3 single crystals before and after fast-neutron irradiation

2015 ◽  
Vol 60 (5) ◽  
pp. 620-628 ◽  
Author(s):  
A. I. Stash ◽  
S. A. Ivanov ◽  
S. Yu. Stefanovich ◽  
A. V. Mosunov ◽  
V. M. Boyko ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Fast Neutron ◽  
Single Crystals ◽  
Neutron Irradiation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fast Neutron Irradiation ◽  
Before And After

Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals

2010 ◽  
Vol 1246 ◽  
Author(s):  
Avinash Gupta ◽  
Ping Wu ◽  
Varatharajan Rengarajan ◽  
Xueping Xu ◽  
Murugesu Yoganathan ◽  
...  
Keyword(s):  
Single Crystals ◽  
Growth Process ◽  
Large Diameter ◽  
Commercial Production ◽  
High Resistivity ◽  
Steady Growth ◽  
Vanadium Doping ◽  
Low Capacitance ◽  
Very High

AbstractSiC single crystals are grown at II-VI by the seeded sublimation technique. The process has been scaled up and optimized to support commercial production of high-quality 100 mm diameter, Semi-Insulating (SI) 6H substrates and 100 mm 4H n+ substrates. The growth process incorporates special elements aimed at achieving uniform sublimation of the source, steady growth rate, uniform doping and reduced presence of background impurities.Semi-insulating 6H substrates are produced using precise vanadium compensation. Vanadium doping is optimized to yield SI material with very high resistivity and low capacitance.Crystal quality of the substrates is evaluated using a wide variety of techniques. Specific defects, their interaction and evolution during growth are described with emphasis on micropipes and dislocations. The current quality of the 6H SI and 4H n+ crystals grown at II-VI is summarized.

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