Study on formation and photoluminescence of carbon nanowalls grown on silicon substrates by hot filament chemical vapor deposition

2014 ◽  
Vol 149 ◽  
pp. 258-263 ◽  
Author(s):  
Yi Wang ◽  
Juan Li ◽  
Kun Song
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Carbon Nanowalls ◽  
Hot Filament

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD

2017 ◽  
Vol 897 ◽  
pp. 91-94
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Michael Cromar ◽  
Bart van Zeghbroeck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Degrees Of Freedom ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Hot Filament ◽  
Cubic Silicon Carbide ◽  
First Time

In this paper, we report, for the first time, growth of high-quality single-crystalline 3C-SiC on silicon substrates using Hot Filament Chemical Vapor Deposition (HF-CVD). Rocking curve X-Ray diffraction (XRD) measurements revealed a full-width at half maximum (FWHM) as low as 333 arcsec for a 15 μm thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy. This quality was achieved with a carefully optimized process making use of the additional degrees of freedom the hot filaments create. For example, the hot filaments allow for precursor pre-cracking. Additionally, they allow a tuning of the vertical thermal gradient which creates an improved thermal field compared to classic Chemical Vapor Deposition techniques used for the deposition of this material today.

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

1994 ◽  
Vol 140 (3-4) ◽  
pp. 454-458 ◽  
Author(s):  
C.H. Chao ◽  
G. Popovici ◽  
E.J. Charlson ◽  
E.M. Charlson ◽  
J.M. Meese ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Hot Filament

Phase Transformation of Smooth Diamond Films Grown by hot Filament Chemical Vapor Deposition on Positively Biased Silicon Substrates.

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Popovici ◽  
C. H. Chao ◽  
M. A. Prelas ◽  
E. J. Charlson ◽  
J. M. Meese
Keyword(s):  
Phase Transformation ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Carbon Phase ◽  
Si Substrates ◽  
Hot Filament

ABSTRACTSmooth diamond films have been grown by hot filament chemical vapor deposition under d.c. bias on mirror-polished Si substrates. Films a few micrometers thick were obtained in 30 minutes. Raman spectra showed very broad diamond peaks. X-ray diffraction showed the presence of diamond and also other carbon phase with a line 2.11 Å. With time, the films apparently underwent a phase transformation.

scholarly journals Multiband photoluminescence from carbon nanoflakes synthesized by hot filament CVD: towards solid-state white light sources

2014 ◽  
Vol 2 (16) ◽  
pp. 2851-2858 ◽  
Author(s):  
B. B. Wang ◽  
K. Ostrikov ◽  
K. Zheng ◽  
L. Wang ◽  
S. S. Zou
Keyword(s):  
Chemical Vapor Deposition ◽  
Solid State ◽  
White Light ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Light Sources ◽  
Hot Filament Cvd ◽  
Carbon Nanoflakes ◽  
Hot Filament

Carbon nanoflakes (CNFLs) are synthesized on silicon substrates deposited with carbon islands in a methane environment using hot filament chemical vapor deposition.

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 289-294 ◽  
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Bart Van Zeghbroeck
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Charge Carrier Density ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Hot Filament

ABSTRACTFor the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

1995 ◽  
Vol 10 (8) ◽  
pp. 2011-2016 ◽  
Author(s):  
Galina Popovici ◽  
C.H. Chao ◽  
M.A. Prelas ◽  
E.J. Charlson ◽  
J.M. Meese
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Structural Changes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Initial Structure ◽  
Si Substrates ◽  
Diffraction Patterns ◽  
Hot Filament

Diamond films have been grown by hot filament chemical vapor deposition (CVD) on mirror-polished positively biased Si substrates. Very smooth films a few micrometers thick were obtained in only 30 min. SEM, x-ray diffraction patterns, and Raman were used to characterize the films. Not only diamond but other carbon phases, were also detected. The initial structure showed a high density of defects and large stresses. Structural changes in time were found to occur with films apparently undergoing a phase transformation.

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