Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Abstract This work aimed to study a sintered Ni-doped ZnO dilute magnetic semiconductor synthesized by means of a combustion reaction and to evaluate the effect of doping and sintering in the band gap and magnetic properties of the material. X-ray diffraction showed the formation of the ZnO semiconductor phase and also the formation of a second-phase characterized as a solid solution of nickel-zinc oxide. The hysteresis curves showed the success in creating ferromagnetism with doping and the effect of sintering in the remanent magnetization and coercive field values, yet both systems were able to maintain its ferromagnetic behavior. The UV-vis analysis indicated the value of the band gap continued as a semiconductor material, although it has been narrowed. Scanning electron microscopy was used in a complementary way to evaluate the morphology and its effects on magnetic properties.

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Variation of band gap with Mn concentration in Ga1−xMnxSb — A new III–V diluted magnetic semiconductor

Solid State Communications ◽

10.1016/0038-1098(95)00160-3 ◽

1995 ◽

Vol 95 (1) ◽

pp. 53-55 ◽

Cited By ~ 9

Author(s):

S Basu ◽

T Adhikari

Keyword(s):

Band Gap ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Diluted Magnetic ◽

Mn Concentration

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Investigation of the physical properties of Fe:TiO2-diluted magnetic semiconductor nanoparticles

Journal of Materials Chemistry C ◽

10.1039/c7tc00233e ◽

2017 ◽

Vol 5 (17) ◽

pp. 4257-4267 ◽

Cited By ~ 42

Author(s):

Brijmohan Prajapati ◽

Shiv Kumar ◽

Manish Kumar ◽

S. Chatterjee ◽

Anup K. Ghosh

Keyword(s):

Physical Properties ◽

Band Gap ◽

Room Temperature ◽

Doping Concentration ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Semiconductor Nanoparticles ◽

Diluted Magnetic

Room temperature M–H plots of some selective samples. Upper inset shows the variation of PL intensities and lower inset shows the variation of band gap with doping concentration.

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Spin Carrier Exchange Interactions in (Ga,Mn)N and (Zn,Co)O Wide Band Gap Diluted Magnetic Semiconductor Epilayers

Journal of Superconductivity ◽

10.1007/s10948-005-2143-y ◽

2005 ◽

Vol 18 (1) ◽

pp. 15-21 ◽

Cited By ~ 15

Author(s):

D. Ferrand ◽

S. Marcet ◽

W. Pacuski ◽

E. Gheeraert ◽

P. Kossacki ◽

...

Keyword(s):

Band Gap ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Exchange Interactions ◽

Wide Band ◽

Wide Band Gap ◽

Spin Carrier ◽

Diluted Magnetic

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Analysis of structural, morphological and magnetic properties of diluted magnetic semiconductor ZnO:Eu obtained by combustion reaction

Cerâmica ◽

10.1590/0366-69132020663792882 ◽

2020 ◽

Vol 66 (379) ◽

pp. 262-268

Author(s):

D. B. Maia ◽

R. A. Raimundo ◽

T. A. Passos ◽

R. A. Torquato

Keyword(s):

Band Gap ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Zinc Nitrate ◽

Combustion Reaction ◽

Morphological Properties ◽

Second Phase ◽

Europium Nitrate ◽

Before And After ◽

Diluted Magnetic

Abstract Eu-doped semiconductor matrix of ZnO at concentrations of 0.05 and 0.10 mols was synthesized by combustion reaction, using zinc nitrate, europium nitrate, and urea as fuel. In order to analyze the effect of europium concentration and sintering on the structure, band gap, magnetic and morphological properties of ZnO, the samples were sintered at 1100 °C for 30 min and analyzed before and after sintering via X-ray diffraction, ultraviolet and visible spectroscopy, vibrant sample magnetometry, and scanning electron microscopy. From the results obtained, it was found that there was the formation of the semiconductor phase ZnO and also a second-phase (Eu2O3). It was observed that the samples before and after sintering presented band gap values within the semiconductor range and ferromagnetism at room temperature.

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