Analysis of structural, morphological and magnetic properties of diluted magnetic semiconductor ZnO:Eu obtained by combustion reaction

Abstract Eu-doped semiconductor matrix of ZnO at concentrations of 0.05 and 0.10 mols was synthesized by combustion reaction, using zinc nitrate, europium nitrate, and urea as fuel. In order to analyze the effect of europium concentration and sintering on the structure, band gap, magnetic and morphological properties of ZnO, the samples were sintered at 1100 °C for 30 min and analyzed before and after sintering via X-ray diffraction, ultraviolet and visible spectroscopy, vibrant sample magnetometry, and scanning electron microscopy. From the results obtained, it was found that there was the formation of the semiconductor phase ZnO and also a second-phase (Eu2O3). It was observed that the samples before and after sintering presented band gap values within the semiconductor range and ferromagnetism at room temperature.

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Structural Characterization, and Magnetic Morphological Study of Ni+2 Doped ZnO Synthesized by Combustion Reaction Application for DMS

Materials Science Forum ◽

10.4028/www.scientific.net/msf.727-728.511 ◽

2012 ◽

Vol 727-728 ◽

pp. 511-515 ◽

Cited By ~ 2

Author(s):

R. Torquato ◽

E. Shirsath Sagar ◽

Ruth Herta Goldsmith Aliaga Kiminami ◽

Ana Cristina Figueiredo de Melo Costa

Keyword(s):

Magnetic Properties ◽

Magnetic Measurements ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Transition Metal Ions ◽

Combustion Reaction ◽

Second Phase ◽

Doped Zno ◽

Diluted Magnetic ◽

Maximum Temperatures

ZnO is a semiconductor that can be doped with transition metal ions, and thus becomes feasible to use in the diluted magnetic semiconductor (DMS), or semiconductor with magnetic properties. In this work we have studied the influence of doping of Ni+2on the structural, morphological and magnetic properties of Zn1-xNixO system, to x = 0.07, 0.1 and 0.2 mol of Ni+2synthesized by combustion reaction. The systems were characterized by XRD, SEM and VSM. The maximum temperatures ranged from 639 K and 683 K. All systems showed a majority phase formation of ZnO, with the presence of the second phase NiO. The crystallite size for the majority phase varied between 49 and 56nm. All systems have resulted in samples with a morphology consisting of dense clusters, formed by particles pre-sintered and shaped roughly hexagonal plates. The magnetic measurements showed that the values of saturation magnetization lies between 4.6 to 28.5emu/g, remanent magnetization of 0.01 to 0.3 emu/g, coercive force values varies between 12.7 and 62.4 Oe and Curie temperature ranging from 308 to 311K.

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Effect of doping and sintering in structure and magnetic properties of the diluted magnetic semiconductor ZnO:Ni

Cerâmica ◽

10.1590/0366-69132018643722463 ◽

2018 ◽

Vol 64 (372) ◽

pp. 627-631

Author(s):

A. Morais ◽

R. A. Torquato ◽

U. C. Silva ◽

C. Salvador ◽

C. Chesman

Keyword(s):

Magnetic Properties ◽

Band Gap ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Ferromagnetic Behavior ◽

Second Phase ◽

X Ray Diffraction ◽

Diluted Magnetic ◽

Zno Semiconductor ◽

Effect Of Doping

Abstract This work aimed to study a sintered Ni-doped ZnO dilute magnetic semiconductor synthesized by means of a combustion reaction and to evaluate the effect of doping and sintering in the band gap and magnetic properties of the material. X-ray diffraction showed the formation of the ZnO semiconductor phase and also the formation of a second-phase characterized as a solid solution of nickel-zinc oxide. The hysteresis curves showed the success in creating ferromagnetism with doping and the effect of sintering in the remanent magnetization and coercive field values, yet both systems were able to maintain its ferromagnetic behavior. The UV-vis analysis indicated the value of the band gap continued as a semiconductor material, although it has been narrowed. Scanning electron microscopy was used in a complementary way to evaluate the morphology and its effects on magnetic properties.

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Magneto-optical spectroscopy of the wide band gap diluted magnetic semiconductor GaMnN

Materials Science and Engineering B ◽

10.1016/j.mseb.2005.09.037 ◽

2006 ◽

Vol 126 (2-3) ◽

pp. 240-244 ◽

Cited By ~ 3

Author(s):

S. Marcet ◽

D. Ferrand ◽

S. Kuroda ◽

E. Gheeraert ◽

R.M. Galera ◽

...

Keyword(s):

Band Gap ◽

Optical Spectroscopy ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Wide Band ◽

Wide Band Gap ◽

Diluted Magnetic

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Variation of band gap with Mn concentration in Ga1−xMnxSb — A new III–V diluted magnetic semiconductor

Solid State Communications ◽

10.1016/0038-1098(95)00160-3 ◽

1995 ◽

Vol 95 (1) ◽

pp. 53-55 ◽

Cited By ~ 9

Author(s):

S Basu ◽

T Adhikari

Keyword(s):

Band Gap ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Diluted Magnetic ◽

Mn Concentration

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Investigation of the physical properties of Fe:TiO2-diluted magnetic semiconductor nanoparticles

Journal of Materials Chemistry C ◽

10.1039/c7tc00233e ◽

2017 ◽

Vol 5 (17) ◽

pp. 4257-4267 ◽

Cited By ~ 42

Author(s):

Brijmohan Prajapati ◽

Shiv Kumar ◽

Manish Kumar ◽

S. Chatterjee ◽

Anup K. Ghosh

Keyword(s):

Physical Properties ◽

Band Gap ◽

Room Temperature ◽

Doping Concentration ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Semiconductor Nanoparticles ◽

Diluted Magnetic

Room temperature M–H plots of some selective samples. Upper inset shows the variation of PL intensities and lower inset shows the variation of band gap with doping concentration.

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Influence on Doping of 0.4 mol of Co in ZnO Aiming their Application in DMS

Materials Science Forum ◽

10.4028/www.scientific.net/msf.820.181 ◽

2015 ◽

Vol 820 ◽

pp. 181-186 ◽

Cited By ~ 1

Author(s):

Lucius Vinicius Rocha Machado ◽

L.F. Mouzinho ◽

M.R. Silva ◽

E.M.J.A. Pallone ◽

A.C.F.M. Costa

Keyword(s):

Diluted Magnetic Semiconductor ◽

Magnetic Measurement ◽

Magnetic Semiconductor ◽

Maximum Temperature ◽

Electric Heater ◽

Second Phase ◽

X Ray Diffraction ◽

Adsorption Of Nitrogen ◽

Diluted Magnetic ◽

Superficial Area

This paper proposes evaluate the effect on doping of 0.4mol of Co in ZnO, Aiming to use in diluted magnetic semiconductor (DMSs), so for this purpose, an evaluation of the characteristics: structural, morphological and magnetic was investigated. The samples were synthesized by combustion reaction using urea as fuel and an electric heater as source of heating. During the synthesis was performed measurements of temperature and time of combustion flame. The samples were characterized by X-ray diffraction (DRX), adsorption of nitrogen (BET), scanning electron microscopy (SEM), particle size distribution and magnetic measurement. The maximum temperature, and reaction time were, 520 oC and 240 s. The data of the XRD showed how phase majority the ZnO, with crystallite size of 27 nm and trace of second phase CoCo2O4. Presented superficial area of 33.5 m2/g, with morphology consisting of agglomerates in the form of balls smaller than 5 μm. The sample presented behavior ferrimagnetic with saturation magnetization of 0.32 emu/g, type of a magnetic semiconductor.

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