Distribution of electronic states in amorphous Cd–As thin films on the basis of optical measurements

2004 ◽  
Vol 333 (2) ◽  
pp. 206-211 ◽  
Author(s):  
B Jarząbek ◽  
J Weszka ◽  
J Cisowski
2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.


1986 ◽  
Vol 89 ◽  
Author(s):  
W. C. Goltsos ◽  
A. V. Nurmikko ◽  
D. L. Partin

AbstractPhotoluminescence, transmission, and reflectance measurements have yielded information about the states defining an optical gap in thin films and superlattices based on the (Pb,Eu)Te system, including the limit of high Eu concentration. Magneto-optical measurements show the presence of finite spin exchange processes at low Eu-concentrations.


2016 ◽  
Vol 30 (27) ◽  
pp. 1650343 ◽  
Author(s):  
S. Kerli

The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400[Formula: see text]C and annealed at 550[Formula: see text]C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.


2005 ◽  
Vol 744-747 ◽  
pp. 145-149 ◽  
Author(s):  
A.S. Komolov ◽  
P.J. Møller ◽  
Y.G. Aliaev ◽  
E.F. Lazneva ◽  
S. Akhremtchik ◽  
...  

Author(s):  
Sofea Nabila Hazmin ◽  
F. S. S. Zahid ◽  
N. S. M. Sauki ◽  
M. H. Mamat ◽  
M. N. Amalina

<span>This paper presents the physical and optical properties of AZO thin films on Teflon substrate at low deposition temperature by spray pyrolysis. In this study, the effect of different process parameters such as spray time and substrate to nozzle distance on the physical and optical characteristic of aluminium doped zinc oxide (AZO) deposited on Teflon substrates was investigated. The AZO thin films were successfully deposited onto Teflon substrate by spray pyrolysis technique at low deposition temperature. The physical analysis by X-ray diffraction (XRD) shows that the deposited Teflon substrate films have a preferred orientation along the direction (100) and (101). Optical measurements were conducted using Jasco/V-670 Ex Uv-Vis-NIR Spectrophotometer model to confirms that in visible ray it is possible to get good reflectance of AZO films with a reflection of 80%. The values of band gaps Eg were calculated from the spectra of UV-Visible reflectance that were vary between 3.06 and 3.14 eV. </span>


2019 ◽  
Vol 14 (29) ◽  
pp. 1-7
Author(s):  
Farah Q. Kamil

PbxCd1-xSe compound with different Pb percentage (i.e. X=0,0.025, 0.050, 0.075, and 0.1) were prepared successfully. Thin filmswere deposited by thermal evaporation on glass substrates at filmthickness (126) nm. The optical measurements indicated thatPbxCd1-xSe films have direct optical energy gap. The value of theenergy gap decreases with the increase of Pb content from 1.78 eV to1.49 eV.


1998 ◽  
Vol 547 ◽  
Author(s):  
A. Rougier ◽  
N. Naghavi ◽  
C. Marcel ◽  
F. Portemer ◽  
L. Dupont ◽  
...  

AbstractThin films of indium zinc oxide so called IZO were prepared with pulsed laser deposition. It was found that the crystalline structure, the composition and the morphology of the films as well as the optical and electrical properties were quite sensitive to the deposition conditions namely to the temperature and oxygen pressure. The crystallinity of the ZnkIn2O3+k (k from 1 to 5) thin films increases as the substrate temperature increases. An average transmittance of 85 % in the visible region was obtained for any k values. Optical measurements show a continuous decrease of the band gap as the zinc amount increases. The highest conductivity reported is for the ZnIn2O4, thin films deposited at 300 °C (σ = 1.2 103 S/cm). Increasing the amount of Zn (i.e. k value) was found to result in a conductivity decrease. Finally, a good correlation between the electric mobility and the optical mobility is obtained.


2006 ◽  
Vol 73 (21) ◽  
Author(s):  
Liu-Niu Tong ◽  
Cai-Lian Deng ◽  
Frank Matthes ◽  
Martina Müller ◽  
Claus M. Schneider ◽  
...  
Keyword(s):  

2019 ◽  
Vol 59 ◽  
pp. 126-136
Author(s):  
Radia Kalai ◽  
Amara Otmani ◽  
Lakhdar Bechiri ◽  
Noureddine Benslim ◽  
Abdelaziz Amara ◽  
...  

Structural, optical and electrical properties of SnO2 thin films deposited by spray ultrasonic technique were investigated by varying substrate temperature. The structural characterization of the films was analyzed via X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). Films surface morphologies were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Optical absorption spectrum was recorded using the UV–Vis spectroscopy and the films were found to be transparent. Optical measurements showed that the layers had a relatively high absorption coefficient of 105 cm−1. A shift in the absorption edge was observed and the films exhibited direct transitions with band gap energies ranging from 3.85 to 3.94 eV.


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