Characterization of Transparent Conducting Pulsed Laser Deposited Films in the Indium Zinc Oxide System

AbstractThin films of indium zinc oxide so called IZO were prepared with pulsed laser deposition. It was found that the crystalline structure, the composition and the morphology of the films as well as the optical and electrical properties were quite sensitive to the deposition conditions namely to the temperature and oxygen pressure. The crystallinity of the ZnkIn2O3+k (k from 1 to 5) thin films increases as the substrate temperature increases. An average transmittance of 85 % in the visible region was obtained for any k values. Optical measurements show a continuous decrease of the band gap as the zinc amount increases. The highest conductivity reported is for the ZnIn2O4, thin films deposited at 300 °C (σ = 1.2 103 S/cm). Increasing the amount of Zn (i.e. k value) was found to result in a conductivity decrease. Finally, a good correlation between the electric mobility and the optical mobility is obtained.

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Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target

Thin Solid Films ◽

10.1016/s0040-6090(99)01098-6 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 233-240 ◽

Cited By ~ 85

Author(s):

N. Naghavi ◽

A. Rougier ◽

C. Marcel ◽

C. Guéry ◽

J.B. Leriche ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Films ◽

Indium Zinc Oxide

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Effect of laser energy on the properties of neodymium-doped indium zinc oxide thin films deposited by pulsed laser deposition

Superlattices and Microstructures ◽

10.1016/j.spmi.2021.107059 ◽

2021 ◽

pp. 107059

Author(s):

Xiao Fu ◽

Rihui Yao ◽

Zhihao Liang ◽

Dongxiang Luo ◽

Zhuohui Xu ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Pulsed Laser Deposition ◽

Laser Energy ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Films ◽

Indium Zinc Oxide

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Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.999 ◽

2007 ◽

Vol 124-126 ◽

pp. 999-1002 ◽

Cited By ~ 4

Author(s):

Han Na Cho ◽

Jang Woo Lee ◽

Su Ryun Min ◽

Chee Won Chung

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Visible Region ◽

Film Surface ◽

Optical Transmittance ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Indium Zinc Oxide

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

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Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2008.06.026 ◽

2008 ◽

Vol 202 (22-23) ◽

pp. 5467-5470 ◽

Cited By ~ 17

Author(s):

Norihiro Sakai ◽

Yoshihiro Umeda ◽

Fumiaki Mitsugi ◽

Tomoaki Ikegami

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Films

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Optical properties of amorphous indium zinc oxide thin films synthesized by pulsed laser deposition

Applied Surface Science ◽

10.1016/j.apsusc.2014.03.189 ◽

2014 ◽

Vol 306 ◽

pp. 52-55 ◽

Cited By ~ 10

Author(s):

V. Craciun ◽

C. Martin ◽

G. Socol ◽

D. Tanner ◽

H.C. Swart ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Optical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Films ◽

Indium Zinc Oxide

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Preparation and characterization of highly transparent and conductive indium-zinc oxide thin films deposited by pyrolysis spray technique

Optical and Quantum Electronics ◽

10.1007/s11082-016-0596-9 ◽

2016 ◽

Vol 48 (6) ◽

Cited By ~ 6

Author(s):

R. Dounia ◽

A. Migalska-Zalas ◽

M. Addou ◽

J. C. Bernede ◽

A. Outzourhit ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Oxide Thin Films ◽

Indium Zinc Oxide ◽

Spray Technique

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Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

Scientific Bulletin of Valahia University - Materials and Mechanics ◽

10.2478/bsmm-2019-0015 ◽

2019 ◽

Vol 17 (17) ◽

pp. 27-32

Author(s):

Chouaieb Zaouche ◽

Yacine Aoun ◽

Said Benramache ◽

Abdelouahab Gahtar

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Deposition Rate ◽

Spray Pyrolysis Technique ◽

Visible Region ◽

Band Gap Energy ◽

Electrical And Optical Properties ◽

Minimum Value ◽

Average Transmittance

AbstractIn this work, nickel oxide was fabricated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. All fabricated NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films have an electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.

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Highly conducting transparent thin films based on zinc oxide

Journal of Materials Research ◽

10.1557/jmr.1996.0208 ◽

1996 ◽

Vol 11 (7) ◽

pp. 1659-1664 ◽

Cited By ~ 111

Author(s):

Ruiping Wang ◽

Laura L. H. King ◽

Arthur W. Sleight

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Optical Measurements ◽

Visible Range ◽

Hall Measurements ◽

Conductivity Electron ◽

Average Transmittance ◽

Ga Doping

Doped zinc oxide thin films were prepared by rf magnetron sputtering using the dopants Al, Ga, In, and Ge. The best results were obtained with Al and Ga doping where room temperature conductivities were as high as 1600 and 1800 ohm-1cm-1, respectively. Hall measurements were performed at 77 K and 298 K. The Hall mobility as in the range of 9 to 22 cm2/Vs, and there was generally very little temperature dependence of the mobility or conductivity. Cation doping levels were as high as 10 at. %, but the conductivities did not increase beyond 3 at. % doping level. For films with high conductivity, electron carrier concentrations from Hall measurements were significantly lower than the concentrations of dopants. Optical measurements on the films showed that the average transmittance though the visible range is higher than 85%. The measurements also indicated a blueshift of the absorption edge with doping.

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