Electron-beam modification of optical properties of phosphate glasses with high concentration of silver

2018 ◽  
Vol 499 ◽  
pp. 278-282 ◽  
Author(s):  
Alexander I. Sidorov ◽  
Uliana V. Yurina ◽  
Gulnaz R. Rakhmanova ◽  
Marina N. Shinkarenko ◽  
Oleg A. Podsvirov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Phosphate Glasses ◽  
High Concentration

Optical properties of lead phosphate glasses

1994 ◽  
Vol 167 (1-2) ◽  
pp. 122-126 ◽  
Author(s):  
C. Dayanand ◽  
R.V.G.K. Sarma ◽  
G. Bhikshamaiah ◽  
M. Salagram
Keyword(s):  
Optical Properties ◽  
Phosphate Glasses ◽  
Lead Phosphate

Structure and nonlinear optical properties of sodium–niobium phosphate glasses

2008 ◽  
Vol 354 (30) ◽  
pp. 3540-3547 ◽  
Author(s):  
A. Flambard ◽  
J.J. Videau ◽  
L. Delevoye ◽  
T. Cardinal ◽  
C. Labrugère ◽  
...  
Keyword(s):  
Optical Properties ◽  
Nonlinear Optical ◽  
Phosphate Glasses ◽  
Nonlinear Optical Properties ◽  
Niobium Phosphate

Electrical and Optical Properties of Amorphous Si1-xSnx: H Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
D. Girginoudi ◽  
A. Thanailakis ◽  
A. Christou
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Entire Range ◽  
Conductivity Measurements ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Tin Films ◽  
Amorphous Hydrogenated Silicon ◽  
Conductivity Increase ◽  
Band Edge Luminescence

ABSTRACTAmorphous hydrogenated silicon-tin films (α — Six Snx:H) have been prepared by co-electron beam and Knudsen cell deposition. It is shown that the dependence of Eg on x, over the entire range of 0 < x < 0.51 studied, cannot be described by a single linear relationship. The d.c. conductivity measurements indicate two distinct conduction regions as a function of x. The addition of Sn up to x = 0.10 creates a high density of dangling bonds and moves the band edges so a significant conductivity increase is observed. The bonding between Si and H is preferred to Sn and H. Sn-H bonds were observed only for x > 0.40. Photoluminescence measurements show that band edge luminescence dominates at 1.3–1.4 eV.

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