Deuterium retention on He-irradiated F82H with surface impurity layer

2015 ◽  
Vol 463 ◽  
pp. 1001-1004 ◽  
Author(s):  
N. Shinoda ◽  
Y. Yamauchi ◽  
Y. Nobuta
1982 ◽  
Vol 105 (2-3) ◽  
pp. 318-325 ◽  
Author(s):  
T. Namba ◽  
H. Miyaguchi ◽  
M. Yamawaki ◽  
M. Kanno

2021 ◽  
Vol 11 (4) ◽  
pp. 1619
Author(s):  
Jing Yan ◽  
Xia Li ◽  
Kaigui Zhu

The surface morphology of pure W bulks and nanocrystalline tungsten films was investigated after exposure to a low-energy (100 eV/D), high-flux (1.8 × 1021 D·m−2s−1) deuterium plasma. Nanocrystalline tungsten films of 6 μm thickness were deposited on tungsten bulks and exposed to deuterium plasma at various fluences ranging from 1.30 × 1025 to 5.18 × 1025 D·m−2. Changes in surface morphology from before to after irradiation were studied with scanning electron microscopy (SEM). The W bulk exposed to low-fluence plasma (1.30 × 1025 D·m−2) shows blisters. The blisters on the W bulk irradiated to higher-fluence plasma are much larger (~2 µm). The blisters on the surface of W films are smaller in size and lower in density than those of the W bulks. In addition, the modifications exhibit the appearance of cracks below the surface after deuterium plasma irradiation. It is suggested that the blisters are caused by the diffusion and aggregation of the deuterium-vacancy clusters. The deuterium retention of the W bulks and nanocrystalline tungsten films was studied using thermal desorption spectroscopy (TDS). The retention of deuterium in W bulks and W films increases with increasing deuterium plasma fluence when irradiated at 500 K.


2017 ◽  
Vol 494 ◽  
pp. 211-218 ◽  
Author(s):  
Mikhail Zibrov ◽  
Kirill Bystrov ◽  
Matej Mayer ◽  
Thomas W. Morgan ◽  
Hiroaki Kurishita

2013 ◽  
Vol 438 (1-3) ◽  
pp. 204-208 ◽  
Author(s):  
S. Krat ◽  
Yu Gasparyan ◽  
V. Efimov ◽  
A. Mednikov ◽  
M. Zibrov ◽  
...  

2006 ◽  
Vol 349 (3) ◽  
pp. 282-290 ◽  
Author(s):  
V.Kh. Alimov ◽  
D.A. Komarov ◽  
J. Roth ◽  
M. Mayer ◽  
S. Lindig

1984 ◽  
Vol 11 (3) ◽  
pp. 219-223 ◽  
Author(s):  
G. Harsányi ◽  
G. Ripka

Modern surface analytical methods/EMPA, AES, SIMS etc. were used for studying the different layers in thick-film integrated circuits. Diffusion and migration effects, surface impurity distributions and surface compositions were examined. Some of the results are presented in this paper. Electrical measurements are not discussed here; only examples of the practical use of the methods are demonstrated.


2021 ◽  
Vol 548 ◽  
pp. 152873
Author(s):  
O.V. Ogorodnikova ◽  
Z.R. Harutyunyan ◽  
Yu M. Gasparyan ◽  
V.S. Efimov ◽  
M.M. Kharkov ◽  
...  
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