CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR CELLS p-n JUNCTION ZnO AND TiO2 PARAREL ON Cu2O LAYER

Current-Voltage Characteristics of solar cells p-n junction ZnO and TiO₂ parallel in the Cu₂O layer has been determined using solar irradiation. Metal oxide has been used as a semiconductor material, such as ZnO and TiO₂ is an n-type semiconductor. The material has a gap energy of 3.37 eV and 3.2 eV. Thermal oxidation is applied to commercial Cu plates for 60 minutes to produce Cu₂O layers as p-type semiconductors. The process varies in temperature, namely 300, 400, and 500 °C. The process of thermal oxidation on Cu plates at a temperature of 300 °C increases the impurity in the Cu₂O layer. The impurity layer is CuO. Then the CuO layer formed decreases with increasing temperature thermal oxidation. CuO layer increases the efficiency of solar cells p-n junction TiO₂-ZnO parallel in the layer Cu₂O. The results of measurements with sunlight showed that the TiO₂-ZnO/Cu₂O (300) samples had the highest solar cell efficiency, which was 0.28 %.