Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

2017 ◽  
Vol 485 ◽  
pp. 1-7 ◽  
Author(s):  
X.X. Zhang ◽  
Y.Z. Wu ◽  
B. Mu ◽  
L. Qiao ◽  
W.X. Li ◽  
...  
2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator


2000 ◽  
Vol 9 (2) ◽  
pp. 212-218 ◽  
Author(s):  
C. Fernández-Ramos ◽  
M.J. Sayagués ◽  
T.C. Rojas ◽  
M.D. Alcalá ◽  
C. Real ◽  
...  

2010 ◽  
Vol 257 (3) ◽  
pp. 1058-1062 ◽  
Author(s):  
J. Musil ◽  
J. Blažek ◽  
P. Zeman ◽  
Š. Prokšová ◽  
M. Šašek ◽  
...  

2018 ◽  
Vol 9 (3) ◽  
pp. 418-426 ◽  
Author(s):  
G. Abadias ◽  
A. Yu. Daniliuk ◽  
I. A. Solodukhin ◽  
V. V. Uglov ◽  
S. V. Zlotsky

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