Optical sensing analysis of bilayer porous silicon nanostructure

2019 ◽  
Vol 130 ◽  
pp. 217-221 ◽  
Author(s):  
Daohan Ge ◽  
Jianpei Shi ◽  
Jinxiu Wei ◽  
Liqiang Zhang ◽  
Zhen Zhang
Keyword(s):  
Porous Silicon ◽  
Optical Sensing ◽  
Silicon Nanostructure ◽  
Porous Silicon Nanostructure

The Effect of Surface Roughness on Photoluminescence of Porous Silicon

2000 ◽  
Vol 638 ◽  
Author(s):  
Shunsuke Ogawa ◽  
Nobutomo Uehara ◽  
Masato Ohmukai ◽  
Yasuo Tsutsumi
Keyword(s):  
Surface Roughness ◽  
Porous Silicon ◽  
Blue Shift ◽  
The Other ◽  
Quantum Size ◽  
Silicon Nanostructure ◽  
Pl Emission ◽  
Ftir Absorption Spectra ◽  
Porous Silicon Nanostructure ◽  
Effect Of Surface

AbstractWe studied the effect of surface roughness of Si wafers on porous silicon by means of photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy. We prepared several kinds of Si wafers with a different surface roughness, and then the anodization was performed at a same condition. PL spectra show a blue shift with the increase of surface roughness. The particle size of porous silicon nanostructure becomes the smaller with increasing surface roughness at the same time. On the other hand, FTIR absorption spectra show no difference regardless of surface roughness. The PL emission dependent on the surface roughness originates from a quantum size effect. We infer that the surface roughness causes the concentration of the current during anodization in the area where the radius of the curvature at the surface is small.

Surface Morphology and Si 2p Binding Energy Investigation of Multilayer Porous Silicon Nanostructure

2012 ◽  
Vol 620 ◽  
pp. 17-21 ◽  
Author(s):  
Ahmad Afif Safwan Mohd Radzi ◽  
M.A. Yarmo ◽  
M. Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Photoelectron Spectroscopy ◽  
Multilayer Structure ◽  
Electrochemical Etching ◽  
Binding Energies ◽  
Etching Time ◽  
Potential Candidate ◽  
Silicon Nanostructure ◽  
Porous Silicon Nanostructure

Multilayer structure of porous silicon was fabricated using electrochemical etching method. Average thickness of multilayer structure was verified. Surface morphology from Atomic Force Microscopy (AFM) shows that surface roughness was decreased when higher etching time applied to the samples. Si 2p binding energies were corresponded to the composition of void within the silicon which prompted the formation of porous silicon nanostructure. Depth profiling technique from X-Ray photoelectron spectroscopy (XPS) was used for compositional determination of porous silicon layers since samples porosity varied according to current density applied during the electrochemical etching process. Multilayer porous silicon is a high potential candidate for Bragg grating waveguide device.

Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)

2006 ◽  
Vol 517 ◽  
pp. 267-271
Author(s):  
Shahrum Abdullah ◽  
Muhamad Rasat Muhamad ◽  
K.A. Sekak
Keyword(s):  
Porous Silicon ◽  
Integrated Circuits ◽  
Blue Shift ◽  
Cathodic Electrodeposition ◽  
Light Emitter ◽  
Indium Doping ◽  
Silicon Nanostructure ◽  
P Type ◽  
Porous Silicon Nanostructure ◽  
Contact Electrode

The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied. The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are presented. The main objective of this paper is study the EL effects of Indium doping on PSN. Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si [100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of Ethanol. Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and ethanol electrolythe. A diode structure has been fabricated comprising semi-transparent Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra. The In:PSN device shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed. Possible reasons for the enhancement will be discussed. Technological application of PSN as a light emitter would have significant impact on numerous technologies such as display panels or integrated circuits with optoelectronic devices (IO) on board and sensors.

Sign in / Sign up

Export Citation Format

Share Document