Surface Morphology and Si 2p Binding Energy Investigation of Multilayer Porous Silicon Nanostructure

2012 ◽  
Vol 620 ◽  
pp. 17-21 ◽  
Author(s):  
Ahmad Afif Safwan Mohd Radzi ◽  
M.A. Yarmo ◽  
M. Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Photoelectron Spectroscopy ◽  
Multilayer Structure ◽  
Electrochemical Etching ◽  
Binding Energies ◽  
Etching Time ◽  
Potential Candidate ◽  
Silicon Nanostructure ◽  
Porous Silicon Nanostructure

Multilayer structure of porous silicon was fabricated using electrochemical etching method. Average thickness of multilayer structure was verified. Surface morphology from Atomic Force Microscopy (AFM) shows that surface roughness was decreased when higher etching time applied to the samples. Si 2p binding energies were corresponded to the composition of void within the silicon which prompted the formation of porous silicon nanostructure. Depth profiling technique from X-Ray photoelectron spectroscopy (XPS) was used for compositional determination of porous silicon layers since samples porosity varied according to current density applied during the electrochemical etching process. Multilayer porous silicon is a high potential candidate for Bragg grating waveguide device.

Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications

2020 ◽  
Vol 398 ◽  
pp. 29-33 ◽  
Author(s):  
Mariam M. Hassan ◽  
Makram A. Fakhri ◽  
Salah Aldeen Adnan
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Pore Diameter ◽  
Electrochemical Etching ◽  
Morphological Properties ◽  
Etching Time ◽  
Silicon Structure ◽  
Si Substrate ◽  
Etching Technique ◽  
Structure Surface

Porous silicon (n-PS) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. We studies the structure, surface morphology, pore diameter, roughness, based on (XRD), (AFM), (SEM) at different etching time (5, 10 min) and current (10mA/cm2).

Optical sensing analysis of bilayer porous silicon nanostructure

2019 ◽  
Vol 130 ◽  
pp. 217-221 ◽  
Author(s):  
Daohan Ge ◽  
Jianpei Shi ◽  
Jinxiu Wei ◽  
Liqiang Zhang ◽  
Zhen Zhang
Keyword(s):  
Porous Silicon ◽  
Optical Sensing ◽  
Silicon Nanostructure ◽  
Porous Silicon Nanostructure

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology

2018 ◽  
Vol 282 ◽  
pp. 94-98
Author(s):  
Graniel Harne A. Abrenica ◽  
Mikhail V. Lebedev ◽  
Hy Le ◽  
Andreas Hajduk ◽  
Mathias Fingerle ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Surface Chemistry ◽  
Photoelectron Spectroscopy ◽  
Chemical Etching ◽  
Electrochemical Etching ◽  
Spectroscopic Techniques ◽  
X Ray ◽  
Etching Behavior ◽  
Effect Of Oxygen

We report on the (electro) chemical etching behavior, surface morphology and composition of n-type Ge (100) in acidic halide solutions using various analytical and spectroscopic techniques. The use of an integrated (electro) chemical etching chamber connected to X-ray photoelectron spectroscopy instrument to exclude the effect of oxygen from atmosphere is highlighted.

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)

2017 ◽  
Vol 46 ◽  
pp. 45-56 ◽  
Author(s):  
Khalid Omar ◽  
Khaldun A. Salman
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon Solar Cells ◽  
Etching Time ◽  
Crystalline Silicon Solar Cells ◽  
Coating Layers

Electrochemical etching was carried out to produce porous silicon based on crystalline silicon n-type (100) and (111) wafers. Etching times of 10, 20, and 30 min were applied. Porous silicon layer was used as anti-reflection coating on crystalline silicon solar cells. The optimal etching time is 20 min for preparing porous silicon layers based on crystalline silicon n-type (100) and (111) wafers. Nanopores with high porosity were produced on the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers with average diameters of 5.7 and 5.8 nm, respectively. Average crystallite sizes for the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers were 20.57 and 17.45 nm at 20 and 30 min, respectively, due to the increase in broadening of the full width at half maximum. Photoluminescence peaks for porous silicon layers based on crystalline silicon n-type (100) and (111) wafers increased with growing porosity and a great blue shift in luminescence. The minimum effective coefficient of reflection was obtained from porous silicon layers based on the crystalline silicon n-type (100) wafer compared with n-type (111) wafer and as-grown at different etching times. Porous silicon layers based on the crystalline silicon n-type (100) wafer at 20 min etching time exhibited excellent light trapping at wavelengths ranging from 400 to 1000 nm. Thus, fabricated crystalline silicon solar cells based on porous silicon (100) anti-reflection coating layers achieved the highest efficiency at 15.50% compared to porous silicon (111) anti-reflection coating layers. The efficiency is characterized applying I-V characterization system under 100 mW/cm2 illumination conditions.

Influence of Electrochemical Etching Parameters on Morphology of Porous Silicon

2014 ◽  
Vol 1055 ◽  
pp. 68-72 ◽  
Author(s):  
Lan Liu ◽  
Yan Xue ◽  
Xiao Ming Ren ◽  
Rui Zhen Xie
Keyword(s):  
Porous Silicon ◽  
Specific Surface ◽  
Surface Area ◽  
Specific Surface Area ◽  
High Speed ◽  
Electrochemical Etching ◽  
Etching Time ◽  
Adsorption Surface ◽  
Etching Parameters ◽  
And Control

In order to protect porous silicon from break and enhance it’s porosity and specific surface area, porous silicon is prepared with electrochemical etching method. The charateristic of porous silicon is investigated with SEM and high-speed adsorption surface area and porosity analyzer. The results show that the porous silicon prepared with the method of gradient etching and control of etching time is mechanically stable. The porosity and specfic surface area are improved.

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