Corrigendum to “Photochemistry and photo-electrochemistry on synthetic semiconducting diamond” [J. Photochem. Photobiol. C: Photochem. Rev. 31 (2017) 139–152]

2017 ◽  
Vol 33 ◽  
pp. 180
Author(s):  
Daibing Luo ◽  
Kazuya Nakata ◽  
Akira Fujishima ◽  
Shanhu Liu
Keyword(s):  
Semiconducting Diamond

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Raman electronic effect for non‐destructive boron calibration in type IIb semiconducting diamond

2021 ◽  
Author(s):  
Shengya Zhang ◽  
Zhuangfei Zhang ◽  
Wencai Yi ◽  
Xin Chen ◽  
Xiaobing Liu
Keyword(s):  
Electronic Effect ◽  
Semiconducting Diamond ◽  
Non Destructive

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

2020 ◽  
Vol 528 ◽  
pp. 146998
Author(s):  
J.C. Piñero ◽  
J. de Vecchy ◽  
D. Fernández ◽  
G. Alba ◽  
J. Widiez ◽  
...  
Keyword(s):  
Semiconducting Diamond

scholarly journals Development of Contact Materials for Semiconductor Devices. Ohmic Contacts on Semiconducting Diamond.

Materia Japan ◽  
1994 ◽  
Vol 33 (6) ◽  
pp. 750-754
Author(s):  
Takeshi Tachibana ◽  
Kazushi Hayashi ◽  
Koji Kobashi
Keyword(s):  
Ohmic Contacts ◽  
Semiconductor Devices ◽  
Contact Materials ◽  
Semiconducting Diamond

Magnetoresistance of a p-type Semiconducting Diamond

1957 ◽  
Vol 70 (5) ◽  
pp. 527-530 ◽  
Author(s):  
E W J Mitchell ◽  
P T Wedepohl
Keyword(s):  
Semiconducting Diamond ◽  
P Type

Ultrafast photoconductive response of semiconducting diamond

1981 ◽  
Vol 38 (12) ◽  
pp. 1223-1225 ◽  
Author(s):  
L.A. Vermeulen ◽  
J.F. Young ◽  
M.I. Gallant ◽  
H.M. van Driel
Keyword(s):  
Semiconducting Diamond

Cold Cathode of p-Type Semiconducting Diamond Films for Gas Discharge

2007 ◽  
Vol 4 (S1) ◽  
pp. S942-S945 ◽  
Author(s):  
Akimitsu Hatta ◽  
Hiroshi Nakatsuma ◽  
Keishi Yanai ◽  
Tsuyoshi Nishikawa
Keyword(s):  
Diamond Films ◽  
Gas Discharge ◽  
Cold Cathode ◽  
Semiconducting Diamond ◽  
P Type
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