Carrier transport mechanisms of reactively direct current magnetron sputtered tungsten oxide/n-type crystalline silicon heterojunction

2020 ◽  
Vol 472 ◽  
pp. 228460
Author(s):  
Vinh-Ai Dao ◽  
Thanh Thuy Trinh ◽  
Sangho Kim ◽  
Le Van Ngoc ◽  
Truong Doan Viet ◽  
...  
2008 ◽  
Vol 53 (2) ◽  
pp. 704-708
Author(s):  
Vinh Ai Dao ◽  
Kyunghae Kim ◽  
Youngkuk Kim ◽  
Duy Nguyen Van ◽  
Zhenghai Jin ◽  
...  

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  

1987 ◽  
Vol 97-98 ◽  
pp. 939-942 ◽  
Author(s):  
J.P. Conde ◽  
S. Aljishi ◽  
D.S. Shen ◽  
M. Angell ◽  
S. Wagner

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.


2020 ◽  
Vol 8 (47) ◽  
pp. 25402-25410
Author(s):  
Dabin Lin ◽  
Lin Ma ◽  
Wenjun Ni ◽  
Cheng Wang ◽  
Fangteng Zhang ◽  
...  

Ultrafast sub-ps hot carrier relaxation followed by subsequent ps carrier transport from layered 2D to 3D-like perovskite phases is demonstrated.


2000 ◽  
Vol 638 ◽  
Author(s):  
H. B. Kim ◽  
L. Montes ◽  
R. Krishnan ◽  
P. M. Fauchet ◽  
L. Tsybeskov

AbstractWe have studied carrier transport and lateral electrical properties of nanocrystalline Si layers containing size controlled Si nanocrystals. Using results from direct current (dc) and alternating current (ac) conductivity measurements, the charging of Si nanocrystals and Coulomb blockade effect are discussed.


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