Carrier Transport and Lateral Conductivity in Nanocrystalline Silicon Layers

2000 ◽  
Vol 638 ◽  
Author(s):  
H. B. Kim ◽  
L. Montes ◽  
R. Krishnan ◽  
P. M. Fauchet ◽  
L. Tsybeskov
Keyword(s):  
Electrical Properties ◽  
Direct Current ◽  
Coulomb Blockade ◽  
Carrier Transport ◽  
Nanocrystalline Silicon ◽  
Conductivity Measurements ◽  
Si Nanocrystals ◽  
Ac Conductivity Measurements ◽  
Size Controlled ◽  
Nanocrystalline Si

AbstractWe have studied carrier transport and lateral electrical properties of nanocrystalline Si layers containing size controlled Si nanocrystals. Using results from direct current (dc) and alternating current (ac) conductivity measurements, the charging of Si nanocrystals and Coulomb blockade effect are discussed.

Impedance spectroscopy and direct current measurements of YSZ films

2002 ◽  
Vol 756 ◽  
Author(s):  
T. Petrovsky ◽  
H. U. Anderson ◽  
V. Petrovsky
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Direct Current ◽  
High Resistance ◽  
Tape Casting ◽  
Planar Geometry ◽  
Film Material ◽  
Conductivity Measurements ◽  
Good Agreement ◽  
Film Conductivity

ABSTRACTIn this study the electrical properties of thin films of Ysubstituted zirconia were investigated. The films were prepared using a polymer precursor technique and investigated in the temperature region 250 to 900°C. It was shown, that impedance spectroscopy (IS) and direct current (DC) conductivity measurements results are in good agreement for the films measured in plane for temperatures greater than 400°C. Due to the high resistance resulting from a planar geometry, the DC measurements were found preferable at temperatures <600°C.Since in planar geometry the films represent a high resistance to the measurement circuit, it is important to minimize sources of electrical leakage, so different sample holders and substrates were investigated. A sapphire substrate and sample holder design using separated alumina single bore tubing for each electrode provided the lowest electrical leakage.The experimental results showed that electrical behavior of all of the films produced at low annealing temperatures (less than 400°C) was similar regardless of Y content. These films have relatively low conductivity and an activation energy of about 1.5eV. The influence of different Y content started to appear after annealing above 600°C.The results of the film conductivity measurements were compared with those for the bulk samples of Y stabilized zirconia prepared from 200nm powder by tape casting. These samples were measured by IS in plane and through the tape. It was shown that electrical properties of bulk and thin film material were similar.

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

2002 ◽  
Vol 715 ◽  
Author(s):  
Shaoyun Huang ◽  
Souri Banerjee ◽  
Shunri Oda
Keyword(s):  
Electrical Properties ◽  
Nanocrystalline Silicon ◽  
Interface States ◽  
Electron Trapping ◽  
Device Performance ◽  
Positive Shift ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Nanocrystalline Si

AbstractTemperature and frequency dependencies of the electrical properties of SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structures have been studied. A clear positive shift in capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics suggests electron trapping in nc-Si dots. The role of interface states and deep traps in these devices has also been examined, which shows that they have little effect on the overall device performance.

THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2751-2756 ◽  
Author(s):  
KUNJI CHEN ◽  
KAI CHEN ◽  
PEIGAO HAN ◽  
HECHENG ZOU ◽  
ZHONGYUAN MA ◽  
...  
Keyword(s):  
Size Control ◽  
Nanocrystalline Silicon ◽  
Annealing Conditions ◽  
Crystallization Method ◽  
Transmission Electron ◽  
Mean Size ◽  
Sublayer Thickness ◽  
The Mean ◽  
Size Controlled ◽  
Nanocrystalline Si

Size-controlled nanocrystalline silicon ( nc - Si ) has been prepared from a - SiN x / a - Si:H/a - SiN x ( 'a' standing for amorphous) sandwich structures by thermal annealing. Transmission electron microscope analyses show that the mean size and the grain size distribution (GSD) of the nc - Si are controlled by the annealing conditions and the a - Si sublayer thickness. Based on our theoretical model of constrained crystallization, we interpret the phenomena of the growth halt of nc - Si and higher crystallization temperature for the thinner a - Si sublayers. The experimental results show that constrained crystallization method is promising to achieve uniform and high density nc - Si array which can be used in the future nano-devices.

ELECTRICAL PROPERTIES OF RARE EARTH SUBSTITUTED Bi6Fe2Ti3O18 COMPOUND

2002 ◽  
Vol 16 (16) ◽  
pp. 2231-2246 ◽  
Author(s):  
N. V. PRASAD ◽  
G. PRASAD ◽  
G. S. KUMAR
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Ac Conductivity ◽  
Dc Conductivity ◽  
Polycrystalline Materials ◽  
Conductivity Measurements ◽  
Conductivity Data ◽  
Ac Conductivity Measurements ◽  
Lower Temperature

The Ac conductivity measurements of polycrystalline materials of rare earth substituted Bi 6 Fe 2 Ti 3O18 compound at different frequencies (1 kHz–1 MHz) and temperatures (30–550°C) are reported. The dc conductivity, ionic hoping rate as well as carrier densities have been extracted from the ac conductivity data. The results show that hoping mechanism dominates at lower temperature. The results are discussed.

Characterization of hydrogenated nanocrystalline silicon thin films prepared with various negative direct current biases

2008 ◽  
Vol 23 (3) ◽  
pp. 790-797 ◽  
Author(s):  
Jae-Hyun Shim ◽  
Nam-Hee Cho ◽  
El-Hang Lee ◽  
Han-Sup Lee
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Relative Fraction ◽  
Silicon Thin Films ◽  
Dc Bias ◽  
Frequency Power ◽  
Nanocrystalline Si

Hydrogenated nanocrystalline Si (nc-Si:H) thin films were prepared by plasma- enhanced chemical vapor deposition (PECVD). The films were deposited with a radio-frequency power of 100 W, while substrates were exposed to direct current (dc) biases in the range from 0 to −400 V. The effects of dc bias on the formation of nanoscale Si crystallites in the films and on their optical characteristics were investigated. The size of the Si crystallites in the films ranges from ∼1.9 to ∼4.1 nm. The relative fraction of the crystallites in the films reached up to ∼56.5% when a dc bias of −400 V was applied. Based on the variation in the structural, chemical, and optical features of the films with dc bias voltages, a model for the formation of nanostructures of the nc-Si:H films prepared by PECVD was suggested. This model can be utilized to understand the evolution in the size and relative fraction of the nanocrystallites as well as the amorphous matrix in the nc-Si:H films.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Electrical Properties of Donor and Acceptor Doped Gd2Ti2O7

1994 ◽  
Vol 369 ◽  
Author(s):  
Igor Kosacki ◽  
Harry L. Tuller
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Conductivity Measurements ◽  
Donor And Acceptor ◽  
Mn Doped

The results of electrical conductivity measurements on Nb, W, and Mn-doped Gd2Ti2O7 are presented. A correlation between electrical conductivity, the oxygen partial pressure and type of dopants has been obtained. The source of the different PO2 dependence for Mn-doped material is discussed.

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