Analytical modelling of carrier transport mechanisms in long wavelength planar n+–p HgCdTe photovoltaic detectors

2014 ◽  
Vol 64 ◽  
pp. 56-61 ◽  
Author(s):  
Vishnu Gopal ◽  
Xiao-hui Xie ◽  
Qing-jun Liao ◽  
Xiao-ning Hu
Keyword(s):  
Carrier Transport ◽  
Analytical Modelling ◽  
Transport Mechanisms ◽  
Long Wavelength ◽  
Photovoltaic Detectors

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices

1987 ◽  
Vol 97-98 ◽  
pp. 939-942 ◽  
Author(s):  
J.P. Conde ◽  
S. Aljishi ◽  
D.S. Shen ◽  
M. Angell ◽  
S. Wagner
Keyword(s):  
Carrier Transport ◽  
Transport Mechanisms

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

Carrier transport mechanisms of reactively direct current magnetron sputtered tungsten oxide/n-type crystalline silicon heterojunction

2020 ◽  
Vol 472 ◽  
pp. 228460
Author(s):  
Vinh-Ai Dao ◽  
Thanh Thuy Trinh ◽  
Sangho Kim ◽  
Le Van Ngoc ◽  
Truong Doan Viet ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Direct Current ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Transport Mechanisms

Unveiling hot carrier relaxation and carrier transport mechanisms in quasi-two-dimensional layered perovskites

2020 ◽  
Vol 8 (47) ◽  
pp. 25402-25410
Author(s):  
Dabin Lin ◽  
Lin Ma ◽  
Wenjun Ni ◽  
Cheng Wang ◽  
Fangteng Zhang ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Transport Mechanisms ◽  
Carrier Relaxation ◽  
Hot Carrier ◽  
Layered Perovskites ◽  
2D To 3D

Ultrafast sub-ps hot carrier relaxation followed by subsequent ps carrier transport from layered 2D to 3D-like perovskite phases is demonstrated.

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

2018 ◽  
Vol 924 ◽  
pp. 339-344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Semiconductor Interfaces ◽  
Key Points ◽  
Schottky Type ◽  
Semiconductor Contacts ◽  
P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

Carrier transport mechanisms in narrow-gap photodiodes

1999 ◽  
Author(s):  
Fiodor F. Sizov ◽  
Joanna V. Gumenjuk-Sichevskaya ◽  
Vladimir V. Tetyorkin
Keyword(s):  
Carrier Transport ◽  
Transport Mechanisms ◽  
Narrow Gap
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