Automated screening of 2D crystallization trials using transmission electron microscopy: A high-throughput tool-chain for sample preparation and microscopic analysis

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0313 ◽

2002 ◽

Author(s):

Chin Kai Liu ◽

Chi Jen. Chen ◽

Jeh Yan.Chiou ◽

David Su

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Specimen Preparation ◽

Tem Analysis ◽

Sensitive Issue ◽

Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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Thin solid film sample preparation by a small-angle cleavage for transmission electron microscopy

Thin Solid Films ◽

10.1016/s0040-6090(02)00042-1 ◽

1997 ◽

Vol 304 (1-2) ◽

pp. 157-159 ◽

Cited By ~ 13

Author(s):

Suli Suder ◽

C.A. Faunce ◽

S.E. Donnelly

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Small Angle ◽

Thin Solid Film ◽

Film Sample ◽

Transmission Electron ◽

Solid Film

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Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

MRS Proceedings ◽

10.1557/proc-281-513 ◽

1992 ◽

Vol 281 ◽

Author(s):

S. Shih ◽

K. H. Jung ◽

D. L. Kwong

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sample Preparation ◽

Structural Investigation ◽

Amorphous Material ◽

Porous Si ◽

Plan View ◽

Mesh Structure ◽

Transmission Electron ◽

Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

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