scholarly journals Implementation of the modified Monte Carlo simulation for evaluate the barrier option prices

2017 ◽  
Vol 11 (2) ◽  
pp. 233-240 ◽  
Author(s):  
Kazem Nouri ◽  
Behzad Abbasi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Option Prices ◽  
Barrier Option

scholarly journals Exact Monte Carlo simulation of killed diffusions

2008 ◽  
Vol 40 (1) ◽  
pp. 273-291 ◽  
Author(s):  
Bruno Casella ◽  
Gareth O. Roberts
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Algorithm ◽  
Barrier Option ◽  
Double Barrier ◽  
One Dimensional ◽  
Finite Dimensional ◽  
Theoretical Predictions ◽  
Efficient Alternative ◽  
Barrier Option Pricing

We describe and implement a novel methodology for Monte Carlo simulation of one-dimensional killed diffusions. The proposed estimators represent an unbiased and efficient alternative to current Monte Carlo estimators based on discretization methods for the cases when the finite-dimensional distributions of the process are unknown. For barrier option pricing in finance, we design a suitable Monte Carlo algorithm both for the single barrier case and the double barrier case. Results from numerical investigations are in excellent agreement with the theoretical predictions.

PRICING PARISIAN-STYLE OPTIONS WITH A LATTICE METHOD

1999 ◽  
Vol 02 (01) ◽  
pp. 1-16 ◽  
Author(s):  
MARCO AVELLANEDA ◽  
LIXIN WU
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Convertible Bonds ◽  
Barrier Option ◽  
Lattice Method ◽  
Underlying Asset

A Parisian-style barrier option expires if the price of the underlying asset remains above or below some level(s) continuously over a specified period of time (the "window"). A trinomial-lattice scheme is developed for calculating the price and the sensitivities of such options. Monte–Carlo simulation of hedging events using the resulting deltas show errors which are of the same magnitude as for hedging vanilla options, confirming the validity of proposed scheme. We use these results to price callable and convertible bonds with this "window" feature.

Finite element based Monte Carlo simulation of options on Lévy driven assets

2018 ◽  
Vol 05 (01) ◽  
pp. 1850013 ◽  
Author(s):  
Patrik Karlsson
Keyword(s):  
Differential Equation ◽  
Monte Carlo Simulation ◽  
Finite Element ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Transition Matrix ◽  
Simulation Algorithm ◽  
Option Prices ◽  
European Options ◽  
Inverse Transition

This paper extends the simulation algorithm by Andreasen and Huge (2011) to the simulation of option prices and deltas on Lévy driven assets where the simulation is performed relying on the inverse transition matrix of the discretized partial integro differential equation (PIDE). We demonstrate how one can get accurate prices and deltas of European options on VG and CGMY via Monte Carlo simulations.

THE PRICING OF EXOTIC OPTIONS BY MONTE–CARLO SIMULATIONS IN A LÉVY MARKET WITH STOCHASTIC VOLATILITY

2003 ◽  
Vol 06 (08) ◽  
pp. 839-864 ◽  
Author(s):  
WIM SCHOUTENS ◽  
STIJN SYMENS
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Stochastic Volatility ◽  
Stock Price ◽  
Poisson Approximation ◽  
Exotic Options ◽  
Option Prices ◽  
Compound Poisson Approximation ◽  
Black Scholes ◽  
Cliquet Options

Recently, stock price models based on Lévy processes with stochastic volatility were introduced. The resulting vanilla option prices can be calibrated almost perfectly to empirical prices. Under this model, we will price exotic options, like barrier, lookback and cliquet options, by Monte–Carlo simulation. The sampling of paths is based on a compound Poisson approximation of the Lévy process involved. The precise choice of the terms in the approximation is crucial and investigated in detail. In order to reduce the standard error of the Monte–Carlo simulation, we make use of the technique of control variates. It turns out that there are significant differences with the classical Black–Scholes prices.

scholarly journals Exact Monte Carlo simulation of killed diffusions

2008 ◽  
Vol 40 (01) ◽  
pp. 273-291 ◽  
Author(s):  
Bruno Casella ◽  
Gareth O. Roberts
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Algorithm ◽  
Barrier Option ◽  
Double Barrier ◽  
One Dimensional ◽  
Finite Dimensional ◽  
Theoretical Predictions ◽  
Efficient Alternative ◽  
Barrier Option Pricing

We describe and implement a novel methodology for Monte Carlo simulation of one-dimensional killed diffusions. The proposed estimators represent an unbiased and efficient alternative to current Monte Carlo estimators based on discretization methods for the cases when the finite-dimensional distributions of the process are unknown. For barrier option pricing in finance, we design a suitable Monte Carlo algorithm both for the single barrier case and the double barrier case. Results from numerical investigations are in excellent agreement with the theoretical predictions.

scholarly journals PENENTUAN HARGA JUAL OPSI BARRIER TIPE EROPA DENGAN METODE ANTITHETIC VARIATE PADA SIMULASI MONTE CARLO

2018 ◽  
Vol 7 (2) ◽  
pp. 71
Author(s):  
LUH HENA TERECIA WISMAWAN PUTRI ◽  
KOMANG DHARMAWAN ◽  
I WAYAN SUMARJAYA
Keyword(s):  
Monte Carlo ◽  
Analytic Solution ◽  
Asset Price ◽  
Selling Price ◽  
Barrier Options ◽  
Option Prices ◽  
Barrier Option ◽  
Underlying Asset ◽  
Closing Price ◽  
Path Dependent

The purpose of this research is to compare the selling price of down and out barrier option when the prices are simulated by the Antithetic Variate Monte Carlo and the standar Monte Carlo. Barrier options are path dependent options and the payoff depend on whether the underlying asset price touched the barrier or not during the life of the option. In this research, we conducted simulations against the closing price of the shares of PT Adhi Karya using Standard Monte Carlo simulation and the Monte Carlo-Antithetic Variate simulation. After the simulation, we obtained that the option prices using Antithetic Variate produces a cheaper price than the standar one. We also found that the analytic solution has a smaller error on its confidence interval compare to the Monte Carlo Standar.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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