Effect of rapid thermal annealing time on Au/SiOx film prepared by hot wire assisted plasma enhanced chemical vapour deposition technique

2013 ◽  
Vol 140 (1) ◽  
pp. 37-41 ◽  
Author(s):  
Kee Wah Chan ◽  
Saadah Abdul Rahman ◽  
Zarina Aspanut
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapour Deposition ◽  
Annealing Time ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique

Improved stability of intrinsic nanocrystalline Si thin films deposited by hot-wire chemical vapour deposition technique

2007 ◽  
Vol 515 (20-21) ◽  
pp. 8040-8044 ◽  
Author(s):  
S. Halindintwali ◽  
D. Knoesen ◽  
R. Swanepoel ◽  
B.A. Julies ◽  
C. Arendse ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hot Wire ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique ◽  
Improved Stability ◽  
Nanocrystalline Si

Role of chamber pressure on crystallinity and composition of silicon films using silane and methane as precursors in hot-wire chemical vapour deposition technique

2019 ◽  
Vol 682 ◽  
pp. 126-130
Author(s):  
Ramakrishna Madaka ◽  
Juhi Kumari ◽  
Venkanna Kanneboina ◽  
Himanshu S. Jha ◽  
Pratima Agarwal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Hot Wire ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique

Determination of the optical parameters of a-Si:H thin films deposited by hot wire–chemical vapour deposition technique using transmission spectrum only

Pramana ◽  
2011 ◽  
Vol 76 (3) ◽  
pp. 519-531 ◽  
Author(s):  
NABEEL A BAKR ◽  
A M FUNDE ◽  
V S WAMAN ◽  
M M KAMBLE ◽  
R R HAWALDAR ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Transmission Spectrum ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Optical Parameters ◽  
Hot Wire ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique

Synthesis of Large Carbon Nanotubes from Ferrocene: The Chemical Vapour Deposition Technique

2011 ◽  
Vol 6 (11) ◽  
pp. 1270-1279 ◽  
Author(s):  
Clarence S. Yah ◽  
Geoffrey S. Simate ◽  
Kapil Moothi ◽  
Kwena S. Maphutha ◽  
Sunny E. Iyuke
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique

scholarly journals SnO2:F films synthesized by chemical vapour deposition technique using hydrofluoric acid as doping material

1986 ◽  
Vol 8 (3) ◽  
pp. 315-318 ◽  
Author(s):  
A K Saxena ◽  
R Thangaraj ◽  
S P Singh ◽  
O P Agnihotri
Keyword(s):  
Chemical Vapour Deposition ◽  
Hydrofluoric Acid ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Deposition Technique ◽  
As Doping ◽  
Chemical Vapour Deposition Technique

XRD Studies on Residual Stress of the Diamond Films Grown Using Hot Filament Chemical Vapour Deposition Technique on Silicon Nitride and Tungsten Carbide Substrates

2013 ◽  
Vol 686 ◽  
pp. 325-330 ◽  
Author(s):  
Esah Hamzah ◽  
Tze Mi Yong ◽  
Kevin Chee Mun Fai
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Tungsten Carbide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Deposition Technique ◽  
Chemical Vapour Deposition Technique ◽  
Hot Filament

This study analyses residual stress measurement using X-Ray diffraction method on ultrafine-polycrystalline diamonds and polycrystalline diamonds films grown using Hot Filament Chemical Vapour Deposition technique (HFCVD) on silicon nitride(Si3N4) and tungsten carbide (WC) substrates in the same chamber at the same time with varied pretreatments prior to HFCVD diamond deposition. Measurements were taken perpendicular to the surface and the measured residual stress states of the diamond films are in compression. Thus, assuming isotropic properties of the film, the diamond films grown have tension residual stress parallel to the surface of the substrate. Residual stress is estimated to have the lowest stress for substrate that has undergone 5g/liter silicon carbide seeding process. Effects of residual stress to adhesion are discussed for both substrates.

Carrier loss by rapid thermal-annealing in Si-doped GaAs grown by MOCVD (metal-organic chemical vapour deposition)

1991 ◽  
Vol 69 (3-4) ◽  
pp. 353-356
Author(s):  
C. Aktik ◽  
J. F. Currie ◽  
F. Bosse ◽  
R. W. Cochrane ◽  
J. Auclair
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Deep Level ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Before And After ◽  
Metal Organic ◽  
Si Doped

Si-doped GaAs epitaxial layers grown by metal-organic chemical vapour deposition exhibit substantial carrier density loss after rapid thermal annealing (RTA) at temperatures higher than 850 °C. Hall-effect, capacitance–voltage, deep-level transient spectroscopy, and secondary ion mass spectroscopy measurements were performed on samples before and after RTA. We show that the reduction of free-carrier concentration in the entire thickness of the epitaxial layer is accompanied by the deterioration of the mobility and the enhancement of donor-like deep-level concentration at 0.305 eV below the conduction band, which is in good agreement with the model of silicon donor neutralization by formation of neutral silicon–hydrogen complexes.

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