Optical and dielectric properties of PbZrO 3 thin films prepared by a sol–gel process for energy-storage application

2016 ◽  
Vol 90 ◽  
pp. 410-415 ◽  
Author(s):  
T.F. Zhang ◽  
X.G. Tang ◽  
Q.X. Liu ◽  
Y.P. Jiang ◽  
L.L. Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Storage ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Energy Storage Application ◽  
Sol Gel Process

Optical and dielectric properties of (Zr0.8,Sn0.2)TiO4 thin films prepared by sol–gel process

2003 ◽  
Vol 99 (1-3) ◽  
pp. 382-385 ◽  
Author(s):  
W.X Cheng ◽  
A.L Ding ◽  
P.S Qiu ◽  
X.Y He ◽  
X.Sh Zheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Sol Gel Process

Structure and dielectric properties of 80%Pb(Zn1/3Nb2/3)O3–20%PbTiO3 thin films prepared by modified sol–gel process

2011 ◽  
Vol 60 (2) ◽  
pp. 164-169 ◽  
Author(s):  
Chuanqing Li ◽  
Aiyun Liu ◽  
Junqiang Shi ◽  
Yafei Ruan ◽  
Lei Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Sol Gel Process

Effect of Film Thickness on Structure and Property of Pb(Zr0.53Ti0.47)O3 Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 112-117 ◽  
Author(s):  
Min Xian Shi ◽  
Wei Mao ◽  
Yan Qin ◽  
Zhi Xiong Huang ◽  
Dong Yun Guo
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Structure And Property ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Ferroelectric Hysteresis

Pb(Zr0.53Ti0.47)O3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.

Dielectric Properties of Ba(SnxTi1-x)O3 Thin Films Grown by a Sol-Gel Process

2004 ◽  
Vol 87 (12) ◽  
pp. 2223-2227 ◽  
Author(s):  
Jiwei Zhai ◽  
Bo Shen ◽  
Xi Yao ◽  
Liangying Zhang ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Sol Gel Process
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