scholarly journals Glass-ceramic sealants and steel interconnects: accelerated interfacial stability and reactivity tests at high temperature

2021 ◽  
pp. 110259
Author(s):  
A. Drewniak ◽  
D. Koszelow ◽  
P. Błaszczak ◽  
K. Górnicka ◽  
K. Jurak ◽  
...  
Author(s):  
T.R. Dinger ◽  
G. Thomas

The use of Si3N4, alloys for high temperature, high stress structural applications has prompted numerous studies of the oxynitride glasses which exist as intergranular phases in their microstructures. Oxynitride glasses have been investigated recently in their bulk form in order to understand their crystallization behavior for subsequent Si3N4 applications and to investigate their worth as glass-ceramic precursors. This research investigates the crystallization sequence of a glass having a normalized composition of Y26Si30Al11 ON11 and lying in the A1N-Y2O3-SiO2 section of the Y-Si-Al-O-N system. Such glasses exist as intergranular phases in the technologically important Y2O3/Al2O3-fluxed Si3N4 alloys.


2016 ◽  
Vol 671 ◽  
pp. 238-244 ◽  
Author(s):  
Ming Gu ◽  
Xugui Xia ◽  
Xiangyang Huang ◽  
Shengqiang Bai ◽  
Xiaoya Li ◽  
...  

2012 ◽  
Vol 34 (5) ◽  
pp. 826-831 ◽  
Author(s):  
Silvio Buchner ◽  
Marcelo Barbalho Pereira ◽  
Naira Maria Balzaretti

2011 ◽  
Vol 685 ◽  
pp. 340-344 ◽  
Author(s):  
Tung Wai Leo Ngai ◽  
Chang Xu Hu ◽  
Wei Zheng ◽  
Heng Xie ◽  
Yuan Yuan Li

Ti, SiC and their composite materials have been widely used as high temperature structural material. The knowledge of interfacial stability between SiC and Ti is vital in high temperature applications. In this study, SiC/Ti diffusion couples were prepared to investigate the interfacial reactions between SiC and Ti at 1273 K. Phase forming sequence, microstructure and thermal stability of SiC/Ti interface were studied. It was indicated that after annealed at 1273 K for 10 days, 4 reaction layers were formed at the SiC/Ti interface. The diffusion path between SiC and Ti is SiC/Ti3SiC2/Ti5Si3/Ti5Si3+TiC/Ti3Si/Ti. As the annealing time prolong, the thicknesses of these reaction layers increased.


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