Erratum to “Effect of substrate temperature on the thermal stability of Cu/Zr–N/Si contact system” [Materials Lett. 62 (2007) 2289–2292]

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

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Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells

10.1117/12.24407 ◽

1991 ◽

Cited By ~ 2

Author(s):

Boris S. Elman ◽

Emil S. Koteles ◽

Paul Melman ◽

Mark A. Rothman

Keyword(s):

Thermal Stability ◽

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Single Quantum ◽

Thermal Stability Of

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Zirconium Mediated Hydrogen Outdiffusion from p-GaN

MRS Proceedings ◽

10.1557/proc-595-f99w10.9 ◽

1999 ◽

Vol 595 ◽

Author(s):

E. Kaminska ◽

A. Piotrowska ◽

A. Barcz ◽

J. Jasinski ◽

M. Zielinski ◽

...

Keyword(s):

Thermal Stability ◽

Thermal Behavior ◽

Ohmic Contact ◽

Contact System ◽

P Type ◽

Thermal Stability Of

AbstractWe have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

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Thermal Stability of Amorphous-like WNx/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p+-Si Contact System

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1343 ◽

1999 ◽

Vol 38 (Part 1, No. 3A) ◽

pp. 1343-1351 ◽

Cited By ~ 2

Author(s):

Kow-Ming Chang ◽

I-Chung Deng ◽

Ta-Hsun Yeh ◽

Kuen-Der Lain ◽

Chao-Ming Fu

Keyword(s):

Thermal Stability ◽

Diffusion Barrier ◽

Chemical Vapor ◽

Contact System ◽

Chemical Vapor Deposited ◽

Thermal Stability Of

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Influence of Substrate Temperature on the Transformation Front Velocities That Determine Thermal Stability of Vapor-Deposited Glasses

The Journal of Physical Chemistry B ◽

10.1021/jp512905a ◽

2015 ◽

Vol 119 (9) ◽

pp. 3875-3882 ◽

Cited By ~ 16

Author(s):

Shakeel S. Dalal ◽

M. D. Ediger

Keyword(s):

Thermal Stability ◽

Substrate Temperature ◽

Influence Of Substrate ◽

Transformation Front ◽

Thermal Stability Of

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Auger electron spectroscopy study on the thermal stability of the Al/Al12W/W2N/Si contact system

Journal of Applied Physics ◽

10.1063/1.353881 ◽

1993 ◽

Vol 73 (1) ◽

pp. 185-188 ◽

Cited By ~ 1

Author(s):

Mayumi Takeyama ◽

Katsutaka Sasaki ◽

Atsushi Noya

Keyword(s):

Thermal Stability ◽

Auger Electron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Contact System ◽

Spectroscopy Study ◽

Thermal Stability Of

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Zirconium Mediated Hydrogen Outdiffusion From p-GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004774 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 570-576

Author(s):

E. Kaminska ◽

A. Piotrowska ◽

A. Barcz ◽

J. Jasinski ◽

M. Zielinski ◽

...

Keyword(s):

Thermal Stability ◽

Thermal Behavior ◽

Ohmic Contact ◽

Contact System ◽

P Type ◽

Thermal Stability Of

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

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