Focused ion beam and dual platform systems are versatile tools for nanoengineering and nano-science applications. These systems complement conventional processing methods and can be used to prototype and modify a diverse range of nano-devices and sensors. This article discusses FIB
nanofabrication and compares it with other fabrication techniques such as electron beam lithography and reactive ion etching. Aspects such as the minimum feature size and side wall profiles are discussed and compared. In addition, the limitations and detrimental effects of FIB processes are
discussed.
We have developed a new method for fabricating a silicon submicrometer shadow mask for nanofabrication in ultra-high vacuum. Combining KOH anisotropic wet etching, electron beam lithography, reactive ion etching and focused ion beam techniques, a pattern size of 2.5×2.5 mm2 and opaque part about 1 μm can be obtained.
Direct comparison of domain wall behavior in permalloy nanowires patterned by electron beam lithography and focused ion beam milling