Investigation of oxygen diffusion behavior in terbium using 18 O 2 isotopic tracking by high resolution SIMS

2016 ◽  
Vol 176 ◽  
pp. 253-256 ◽  
Author(s):  
Guoling Li ◽  
Li Li ◽  
Jialong Hao ◽  
Jie Zheng ◽  
Wenhuai Tian ◽  
...  
Keyword(s):  
High Resolution ◽  
Oxygen Diffusion ◽  
Diffusion Behavior

Observation of Diffusion Behavior in Al-Implanted ZnO Single Crystal

2009 ◽  
Vol 421-422 ◽  
pp. 197-200 ◽  
Author(s):  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
Kenji Matsumoto ◽  
Masashi Uematsu ◽  
Hajime Haneda ◽  
...  
Keyword(s):  
Diffusion Coefficients ◽  
Oxygen Diffusion ◽  
Depth Profiling ◽  
Implantation Technique ◽  
Constant Concentration ◽  
Concentration Region ◽  
Diffusion Behavior ◽  
Oxygen Interstitial ◽  
Zno Single Crystal ◽  
Diffusion Behaviors

Diffusion behaviors of aluminum (Al) in zinc-oxide (ZnO) single crystals were measured by means of ion implantation technique and SIMS depth profiling. It was found that Al concentration profile had a peculiar shape with a constant-concentration region and a steep tail, which was also found in profiles of other donors such as Ga and In. Detailed analysis of the profiles revealed that the diffusivity of Al was proportional to the square of Al concentration and its intrinsic diffusivity was much smaller than previously reported values. Oxygen diffusion experiments were also performed and the implantation of Al ions enhanced the oxygen diffusion coefficients by about 20 times. This result indicates that oxygen interstitial diffusion occurs in n-type ZnO.

Effect of Annealing Atmosphere on Oxygen Diffusion through Ba-Fe-Based Perovskite Oxide

2011 ◽  
Vol 485 ◽  
pp. 141-144 ◽  
Author(s):  
Ken Watanabe ◽  
Tetsuya Kida ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
Kengo Shimanoe ◽  
...  
Keyword(s):  
High Resolution ◽  
Grain Boundary ◽  
Oxygen Diffusion ◽  
Tracer Diffusion ◽  
The Other ◽  
Perovskite Oxide ◽  
Annealing Atmosphere ◽  
Other Hand ◽  
Secondary Ion

To determine the effect of the annealing atmosphere on oxygen diffusion through Ba0.95La0.05FeO3-d pellets, 18O2 tracer diffusion and high-resolution secondary ion mapping were performed. When annealing in air, the 18O concentration around the surface up to a depth of 40 µm was almost constant. On the other hand, when annealing in vacuum, the 18O concentration obviously decreased. High-resolution secondary ion mapping indicated that the 18O concentration around the grain boundary was reduced. These results suggested that the grain boundary of BLF annealed in vacuum prevents oxygen diffusion.

Thermal diffusion behavior of implanted germanium atoms in silicon dioxide film measured by high-resolution RBS

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8312-8316 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Toyotsugu Ishibashi ◽  
...  
Keyword(s):  
High Resolution ◽  
Silicon Dioxide ◽  
Thermal Diffusion ◽  
Silicon Dioxide Film ◽  
Diffusion Behavior ◽  
Dioxide Film

Diffusion Behavior at the Interface of (Ba,Sr)TiO3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film

2006 ◽  
Vol 301 ◽  
pp. 257-260
Author(s):  
Naoki Wakiya ◽  
Akinori Higuchi ◽  
Haruki Ryoken ◽  
Hajime Haneda ◽  
Keiichi Fukunaga ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Oxygen Diffusion ◽  
Ion Microprobe ◽  
Uphill Diffusion ◽  
Diffusion Behavior ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Layer Thin Film ◽  
Fluorescence Spectrometer ◽  
Secondary Ion

Diffusion behavior at the interface of (001)-epitaxially grown (Ba,Sr)TiO3(BST)/electrode/buffer layer/Si thin films was examined by use of secondary ion-microprobe mass spectrometer (SIMS) and transmission electron microscope (TEM) attached with energy dispersive X-ray fluorescence spectrometer (EDX). As the (001)-epitaxially grown film, following three kinds of structure was grown; (1)BST/(La,Sr)CoO3(LSCO)/CeO2/yttria-stabilized zirconia(YSZ)/Si, (2)BST/PLD-deposited Pt/SrTiO3(ST)/LSCO/CeO2/YSZ/Si and (3)BST/sputter-deposited Pt/ST/LSCO/CeO2/YSZ/Si. For sample (1), uphill diffusion of Sr and Ti was observed at the interface of YSZ and SiO2. Diffusion of Co into CeO2 layer was also detected. These tendencies of diffusion were also observed for samples (2) and (3). In addition to these tendencies, apparent uphill diffusion of Co at the Pt layer was observed for sample (2). However, this diffusion was not observed for sample (3). It was also observed that oxygen diffusion was prevented for sputter-deposited Pt. On the other hand, oxygen diffusion was observed for PLD-deposited Pt.

Observations of the spatial structure of interstellar hydrogen

1967 ◽  
Vol 31 ◽  
pp. 45-46
Author(s):  
Carl Heiles
Keyword(s):  
High Resolution ◽  
Spatial Structure ◽  
Velocity Dispersion ◽  
Temperature Variations

High-resolution 21-cm line observations in a region aroundlII= 120°,b11= +15°, have revealed four types of structure in the interstellar hydrogen: a smooth background, large sheets of density 2 atoms cm-3, clouds occurring mostly in groups, and ‘Cloudlets’ of a few solar masses and a few parsecs in size; the velocity dispersion in the Cloudlets is only 1 km/sec. Strong temperature variations in the gas are in evidence.

Combining integrated systems-biology approaches with intervention-based experimental design provides a higher-resolution path forward for microbiome research

2019 ◽  
Vol 42 ◽  
Author(s):  
J. Alfredo Blakeley-Ruiz ◽  
Carlee S. McClintock ◽  
Ralph Lydic ◽  
Helen A. Baghdoyan ◽  
James J. Choo ◽  
...  
Keyword(s):  
Systems Biology ◽  
High Resolution ◽  
Experimental Design ◽  
Integrated Systems ◽  
Microbiome Research ◽  
Constructive Criticism

Abstract The Hooks et al. review of microbiota-gut-brain (MGB) literature provides a constructive criticism of the general approaches encompassing MGB research. This commentary extends their review by: (a) highlighting capabilities of advanced systems-biology “-omics” techniques for microbiome research and (b) recommending that combining these high-resolution techniques with intervention-based experimental design may be the path forward for future MGB research.

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