Effect of interface defect density on performance of perovskite solar cell: Correlation of simulation and experiment

2018 ◽  
Vol 221 ◽  
pp. 150-153 ◽  
Author(s):  
Arun Singh Chouhan ◽  
Naga Prathibha Jasti ◽  
Sushobhan Avasthi
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Perovskite Solar Cell ◽  
Interface Defect ◽  
Simulation And Experiment

scholarly journals Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Farhana Anwar ◽  
Rafee Mahbub ◽  
Sakin Sarwar Satter ◽  
Saeed Mahmud Ullah
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Defect Density ◽  
Nanorod Array ◽  
Perovskite Solar Cell ◽  
Lead Free ◽  
Zno Nanorod ◽  
Metal Work Function ◽  
Optimum Parameters ◽  
Efficiency Performance

Simulation has been done using SCAPS-1D to examine the efficiency of CH3NH3SnI3-based solar cells including various HTM layers such as spiro-OMeTAD, Cu2O, and CuSCN. ZnO nanorod array has been considered as an ETM layer. Device parameters such as thickness of the CH3NH3SnI3 layer, defect density of interfaces, density of states, and metal work function were studied. For optimum parameters of all three structures, efficiency of 20.21%, 20.23%, and 18.34% has been achieved for spiro-OMeTAD, Cu2O, and CuSCN, respectively. From the simulations, an alternative lead-free perovskite solar cell is introduced with the CH3NH3SnI3 absorber layer, ZnO nanorod ETM layer, and Cu2O HTM layer.

scholarly journals Modeling and Simulation of Lead-Free Perovskite Solar Cell Using SCAPS-1D

2021 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electron Transport ◽  
Doping Concentration ◽  
Defect Density ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Lead Free ◽  
Cell Parameters ◽  
Transport Medium

In this work, the effect of some parameters on tin-based perovskite (CH3NH3SnI3) solar cell were studied through device simulation with respect to adjusting the doping concentration of the perovskite absorption layer, its thickness and the electron affinities of the electron transport medium and hole transport medium, as well as the defect density of the perovskite absorption layer and hole mobility of hole transport material (HTM). A device simulator; the one-dimensional Solar Cells Capacitance Simulator (SCAPS‑1D) program was used for simulating the tin-based perovskite solar cells. The current-voltage (J-V) characteristic curve obtained by simulating the device without optimization shows output cell parameters which include; open circuit voltage (Voc) = 0.64V, short circuit current density (Isc) = 28.50mA/, fill factor (FF) = 61.10%, and power conversion efficiency (PCE) = 11.30% under AM1.5 simulated sunlight of 100mW/cm2 at 300K. After optimization, values of the doping concentration, defect density, electron affinity of electron transport material and hole transport material were determined to be: 1.0x1016cm-3, 1.0x1015cm-3, 3.7 eV and 2.3 eV respectively. Appreciable values of solar cell parameters were obtained with Jsc of 31.38 mA/cm2, Voc of 0.84 V, FF of 76.94% and PCE of 20.35%. when compared with the initial device without optimization, it shows improvement of ~1.10 times in Jsc, ~1.80 times in PCE, ~1.31 times in Voc and ~1.26 time in FF. The results show that the lead-free CH3NH3SnI3 perovskite solar cell which is environmentally friendly is a potential solar cell with high theoretical efficiency of 20.35%.

Numerical modeling of planar lead free perovskite solar cell using tungsten disulfide (WS2) as an electron transport layer and Cu2O as a hole transport layer

2020 ◽  
Vol 34 (24) ◽  
pp. 2050258
Author(s):  
Anjan Kumar ◽  
Sangeeta Singh
Keyword(s):  
Solar Cell ◽  
Electron Transport ◽  
Defect Density ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Tungsten Disulfide ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Hole Transport Layer

Metal halide-perovskite solar cells have managed to attain soaring heights in power conversion efficiency in the past decade, rising from 3.8% to around 24% in 2019. Formal lead-based perovskites have captivated massive attention because of their then toxic nature and short-term stability of fabricated devices. Therefore, lead-free perovskites have drawn the researcher’s interest in recent years. In this work, we projected a unique planar perovskite structure constituted of [Formula: see text] Tungsten Disulfide [Formula: see text] lead-free perovskite[Formula: see text]. Herein, Tungsten Disulfide (WS2) acts as an electron transport layer (ETL) due to its excellent electron transport capability. The cuprous oxide is used as a hole transport layer (HTL) due to its perfect band alignment with perovskites. The proposed structure is quantitatively analyzed using a solar cell capacitance simulator. The simulation carried out revealed that tin halide perovskite (CH3NH3SnI3) is having the great potential to be an absorbent layer. The proposed configuration demonstrated excellent power configuration efficiency (PCE) of 23% at an optimized thickness of different segments. The impact of neutral defect density and position of defect energy level with respect to active layer on device performance was quantitatively analyzed. The results showed that values of performance parameters ([Formula: see text], FF, [Formula: see text] and PCE) of proposed device configurations are drastically reduced with increasing the total defect density of interfacial and perovskite layers. These simulated results will help the researchers working in the specific area of lead-free perovskite solar cell (LFPSC) fabrication.

Jsc and Voc Optimization of Perovskite Solar Cell with Interface Defect Layer Using Taguchi Method

2018 ◽  
Author(s):  
Mohd Shaparuddin Bahrudin ◽  
Siti Fazlili Abdullah ◽  
Ibrahim Ahmad ◽  
Ahmad Wafi Mahmood Zuhdi ◽  
Azri Husni Hasani ◽  
...  
Keyword(s):  
Solar Cell ◽  
Taguchi Method ◽  
Defect Layer ◽  
Perovskite Solar Cell ◽  
Interface Defect

Design, Performance, and Defect Density Analysis of Efficient Eco-Friendly Perovskite Solar Cell

2020 ◽  
Vol 67 (7) ◽  
pp. 2837-2843
Author(s):  
Shubham ◽  
Raghvendra ◽  
Chetan Pathak ◽  
Saurabh Kumar Pandey
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Perovskite Solar Cell ◽  
Design Performance ◽  
Density Analysis

Theoretical study of highly efficient CH3NH3SnI3 based Perovskite solar cell with CuInS2 quantum dot

2021 ◽  
Author(s):  
Gagandeep Kundu ◽  
Mukhtiyar Singh ◽  
Ramesh Kumar ◽  
Ramesh Kumar ◽  
Vinamrita Singh ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Defect Density ◽  
Cell Structure ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Recent Experimental Study ◽  
Hole Transporting ◽  
In Series ◽  
The Impact

Abstract Simulation studies have been carried out for n-i-p perovskite solar cell (PSC) structure i.e. ITO/SnO2/CH3NH3PbI3/CuInS2/Au. We have considered this cell as our primary structure and is simulated using Solar Cell Capacitance Simulator (SCAPS-1D) software. Here, the CuInS2 quantum dot acts as an inorganic hole transporting layer. Further, the use of the CuInS2 quantum dot in PSCs has been explored by simulating twenty different cell structures. These perovskite solar cells are based on recently used absorber layers, i.e., MASnI3, FAPbI3, and (FAPbI3)0.97(MAPbBr1.5Cl1.5)0.03, and electron transporting layers, i.e., SnO2, TiO2, ZnO, C60, and IGZO. The performance of all structures has been optimized by varying the thickness of the absorber layers and ETLs. The cell structure, ITO/SnO2/CH3NH3SnI3/CuInS2/Au, has been found to exhibit highest power conversion efficiency of 21.79% as compared to other cells. Investigations have also been carried out to analyze the effect of defect density in the absorber layer and the interface of the cell structure. In addition, the cell performance has been ascertained by examining the impact of operating temperature, metal contact work function and that of resistance in series as well as in parallel. The simulation results of our primary cell structure are found to be in good agreement with the recent experimental study.

scholarly journals Effects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions

2010 ◽  
Vol 59 (12) ◽  
pp. 8870
Author(s):  
Zhou Jun ◽  
Di Ming-Dong ◽  
Sun Tie-Tun ◽  
Sun Yong-Tang ◽  
Wang Hao
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Interface Defect ◽  
Silicon Heterojunctions
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