Growth and characterization of amorphous boron nitride dielectric films on Si via RF sputtering at room temperature

2018 ◽  
Vol 227 ◽  
pp. 284-288 ◽  
Author(s):  
Qasim Abbas ◽  
Hongwei Liang ◽  
Jianjun Shi ◽  
Yuanpeng Chen ◽  
Xiaochuan Xia ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Dielectric Films ◽  
Amorphous Boron

Characterization of HfO2/Si Exposed to Water Vapor at Room Temperature

2006 ◽  
Vol 917 ◽  
Author(s):  
Carlos Driemeier ◽  
Elizandra Martinazzi ◽  
Israel J. R. Baumvol ◽  
Evgeni Gusev
Keyword(s):  
Water Vapor ◽  
Metal Oxide ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dielectric Films ◽  
Nuclear Reaction Analysis ◽  
Environmental Air

AbstractHfO2-based materials are the leading candidates to replace SiO2 as the gate dielectric in Si-based metal-oxide-semiconductor filed-effect transistors. The ubiquitous presence of water vapor in the environments to which the dielectric films are exposed (e.g. in environmental air) leads to questions about how water could affect the properties of the dielectric/Si structures. In order to investigate this topic, HfO2/SiO2/Si(001) thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i) the formation of strongly bonded hydroxyls at the HfO2 surface; ii) room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii) hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

Characterization of HCl-Doped Polyaniline-Ag Nanocomposite Prepared by Chemical and Physical Combinative Method

2013 ◽  
Vol 677 ◽  
pp. 55-60 ◽  
Author(s):  
Bing Hu ◽  
Yang Cao ◽  
Rong Ying Huang ◽  
Jian Bo Fu ◽  
Hong Qiu
Keyword(s):  
Grain Size ◽  
Ag Nanoparticles ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Chemical Polymerization ◽  
Average Grain Size ◽  
Doped Polyaniline ◽  
Agcl Nanoparticles

HCl-doped polyaniline (HCl-PANI) powder is synthesized by using a chemical polymerization procedure. Then Ag nanoparticles are deposited on the HCl-PANI at room temperature by RF sputtering. After this process, the nanocomposite is obtained by the chemical and physical combinative method. The nominal Ag content in the nanocomposite ranges from 1.0 wt% to 3.3 wt%. For all the nanocomposites, the Ag nanoparticles convert to AgCl nanoparticles. Namely, the HCl-PANI-AgCl nanocomposites are obtained. A content of the AgCl in the nanocomposite increases with increasing Ag content. The AgCl nanoparticle consists of many grains. An average grain size of AgCl is about 40 nm and is independent of the Ag content. A conductivity of the nanocomposite decreases with increasing Ag content.

Epitaxial growth of Co/Cu[100] and [111] superlattices via rf sputtering on sapphire (1120)-substrates

1994 ◽  
Vol 9 (3) ◽  
pp. 570-581 ◽  
Author(s):  
Ch. Morawe ◽  
A. Abromeit ◽  
N. Metoki ◽  
P. Sonntag ◽  
H. Zabel
Keyword(s):  
Electron Microscope ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Growth Direction ◽  
Substrate Orientation ◽  
Careful Choice ◽  
X Ray ◽  
Transmission Electron ◽  
Average Lattice

Co/Cu superlattices with total thicknesses ranging from 10 nm to 60 nm and with periodicities of 1.6–8.5 nm were sputtered on single-crystalline sapphire (1120)-substrates. Sputtering with low rates at room temperature yields samples of high epitaxial and crystalline quality. By careful choice of the sputtering parameters, either the fee [100] or the fcc [111] orientation can be selected as growth direction on one and the same substrate orientation. The preference for a particular film orientation appears to be kinetically driven. In all cases, the average lattice spacings d and the appearance of satellite reflections in x-ray Bragg-scans point to coherent growth up to thicknesses of 30 nm. X-ray small angle reflectivity measurements reveal clear oscillations and satellites indicative for smooth interfaces. Scanning electron microscope (SEM) and transmission electron microscope (TEM) observations supplement the characterization of the films.

Thermal and Mechanical Properties of Diamond-Like a-C:H Films

1992 ◽  
Vol 270 ◽  
Author(s):  
G. Amato ◽  
G. Benedetto ◽  
L. Boarino ◽  
F. Demichelis ◽  
C. F. Pirri ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Carbon Films ◽  
Complete Characterization ◽  
Thermal And Mechanical Properties ◽  
Amorphous Carbon Films ◽  
Optical Gap ◽  
Hydrogenated Amorphous

ABSTRACTDiamond-like amorphous carbon and hydrogenated amorphous carbon films (DLC) prepared by rf sputtering have been characterized by means of measurements of optical gap, hardness and Young's modulus. Preliminary results of the application of the photothermal displacement technique (PTD) are also reported, confirming that this method can in principle be applied for a more complete characterization of DLC films at room temperature and low temperatures.

Preparation and characterization of polycrystalline MnS thin films by the RF-sputtering technique above room temperature

2003 ◽  
Vol 256 (1-2) ◽  
pp. 12-19 ◽  
Author(s):  
Sandra A. Mayén-Hernández ◽  
Sergio Jiménez-Sandoval ◽  
Rebeca Castanedo-Pérez ◽  
Gerardo Torres-Delgado ◽  
Benjamin S. Chao ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Sputtering

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

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