Determination of band alignment in liquid exfoliated few-layer WSe2/SiO2 interface

2022 ◽  
pp. 131600
Author(s):  
Rahul ◽  
Sunil K. Arora ◽  
S.N. Jha ◽  
Yogesh Kumar
Keyword(s):  
Band Alignment

scholarly journals Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System

2013 ◽  
Vol 417 ◽  
pp. 012012 ◽  
Author(s):  
A Ohta ◽  
H Murakami ◽  
S Higashi ◽  
S Miyazaki
Keyword(s):  
Energy Band ◽  
Band Alignment

Determination of the band alignment of multi-walled carbon nanotubes decorated with cadmium sulfide

2014 ◽  
Vol 321 ◽  
pp. 283-288 ◽  
Author(s):  
M.F.O. Silva ◽  
R.M. Paniago ◽  
D.R. Miquita ◽  
C.B. Pinheiro ◽  
L.O. Ladeira ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Cadmium Sulfide ◽  
Band Alignment ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission

2003 ◽  
Author(s):  
S.R. Johnson ◽  
C.Z. Guo ◽  
S. Chaparro ◽  
Yu.G. Sadofyev ◽  
J. Wang ◽  
...  
Keyword(s):  
Band Alignment

Determination of band alignment at the CdTe/SnTe heterojunction interface for CdTe thin-film solar cells

2019 ◽  
Vol 127 (3) ◽  
pp. 37003
Author(s):  
Tianyu Shu ◽  
Hanlun Xu ◽  
Zeping Weng ◽  
Songsong Ma ◽  
Huizhen Wu
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film

scholarly journals Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Ming-Hui Chiu ◽  
Chendong Zhang ◽  
Hung-Wei Shiu ◽  
Chih-Piao Chuu ◽  
Chang-Hsiao Chen ◽  
...  
Keyword(s):  
Single Layer ◽  
Band Alignment

Band alignment determination of ZnO/PbSe heterostructure interfaces by synchrotron radiation photoelectron spectroscopy

2012 ◽  
Vol 99 (3) ◽  
pp. 37010 ◽  
Author(s):  
C. F. Cai ◽  
B. P. Zhang ◽  
R. F. Li ◽  
H. Z. Wu ◽  
T. N. Xu ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Band Alignment

Determination of band alignment between GaOx and boron doped diamond for selective-area-doped termination structure

2021 ◽  
Author(s):  
Qi-Liang Wang ◽  
Shi-Yang Fu ◽  
Si-Han He ◽  
Hai-Bo Zhang ◽  
Shao-Heng Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Band Alignment ◽  
Boron Doped Diamond ◽  
Small Surface ◽  
X Ray ◽  
Selective Area ◽  
Boron Doped

Abstract n-GaOx thin film is deposited on the single crystal boron doped diamond through RF magnetron sputtering to form a pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured by using X-ray photoelectron spectroscopy to evaluate the heterojunction property. The GaOx/diamond heterojunction shows a type-II staggered band configuration with the valence and conduction band offsets are of 1.28 eV and 1.93 eV, respectively. Those results confirm the feasibility to use n-GaOx as termination structure for diamond power device.

Experimental determination of the effect of alloy composition on the band alignment of the CdTe-Cd1−xMnxTe heterojunction

1995 ◽  
Vol 51 (8) ◽  
pp. 5477-5479 ◽  
Author(s):  
P. Harrison ◽  
T. Stirner ◽  
S. J. Weston ◽  
S. R. Bardorf ◽  
S. Jackson ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Alloy Composition ◽  
Band Alignment
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