Determination of band alignment between GaOx and boron doped diamond for selective-area-doped termination structure

Abstract n-GaOx thin film is deposited on the single crystal boron doped diamond through RF magnetron sputtering to form a pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured by using X-ray photoelectron spectroscopy to evaluate the heterojunction property. The GaOx/diamond heterojunction shows a type-II staggered band configuration with the valence and conduction band offsets are of 1.28 eV and 1.93 eV, respectively. Those results confirm the feasibility to use n-GaOx as termination structure for diamond power device.

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Cost-Effective Flow Cell for the Determination of Malachite Green and Leucomalachite Green at a Boron-Doped Diamond Thin-Film Electrode

Analytical Sciences ◽

10.2116/analsci.22.111 ◽

2006 ◽

Vol 22 (1) ◽

pp. 111-116 ◽

Cited By ~ 21

Author(s):

Passapol NGAMUKOT ◽

Thiraporn CHAROENRAKS ◽

Orawon CHAILAPAKUL ◽

Shoji MOTOMIZU ◽

Suchada CHUANUWATANAKUL

Keyword(s):

Thin Film ◽

Malachite Green ◽

Cost Effective ◽

Flow Cell ◽

Film Electrode ◽

Boron Doped Diamond ◽

Diamond Thin Film ◽

Boron Doped ◽

Leucomalachite Green

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Determination of nanoscale titanium oxide thin film phase composition using X-ray photoelectron spectroscopy valence band analysis

Thin Solid Films ◽

10.1016/j.tsf.2019.04.044 ◽

2019 ◽

Vol 681 ◽

pp. 58-68 ◽

Cited By ~ 2

Author(s):

D. Nanda Gopala Krishna ◽

R.P. George ◽

John Philip

Keyword(s):

Thin Film ◽

Phase Composition ◽

Titanium Oxide ◽

Valence Band ◽

Photoelectron Spectroscopy ◽

Oxide Thin Film ◽

X Ray

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Sequential Electrodeposition of Platinum-Ruthenium at Boron-Doped Diamond Electrodes for Methanol Oxidation

Advances in Physical Chemistry ◽

10.1155/2011/679246 ◽

2011 ◽

Vol 2011 ◽

pp. 1-10 ◽

Cited By ~ 9

Author(s):

Ileana González-González ◽

Camille Lorenzo-Medrano ◽

Carlos R. Cabrera

Keyword(s):

Auger Electron Spectroscopy ◽

Methanol Oxidation ◽

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Diamond Surface ◽

Oh Radicals ◽

Boron Doped Diamond ◽

X Ray ◽

Boron Doped

Sequential electrodeposition of Pt and Ru on boron-doped diamond (BDD) films, in 0.5 M H2SO4 by cyclic voltammetry, has been prepared. The potential cycling, in the aqueous solutions of the respective metals, was between 0.00 and 1.00 V versus Ag/AgCl. The catalyst composites, Pt and PtRu, deposited on BDD film substrates, were tested for methanol oxidation. The modified diamond surfaces were also characterized by scanning electron microscopy-X-ray fluorescence-energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The scanning Auger electron spectroscopy mapping showed the ruthenium signal only in areas where platinum was electrodeposited. Ruthenium does not deposit on the oxidized diamond surface of the boron-doped diamond. Particles with 5–10% of ruthenium with respect to platinum exhibited better performance for methanol oxidation in terms of methanol oxidation peak current and chronoamperometric current stability. The electrogenerated •OH radicals on BDD may interact with Pt surface, participating in the methanol oxidation as shown in oxidation current and the shift in the peak position. The conductive diamond surface is a good candidate as the support for the platinum electrocatalyst, because it ensures catalytic activity, which compares with the used carbon, and higher stability under severe anodic and cathodic conditions.

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Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy

10.7567/ssdm.1999.b-4-1 ◽

1999 ◽

Cited By ~ 2

Author(s):

Hiroshi Itokawa ◽

Tetsuhiro Maruyama ◽

Seiichi Miyazaki ◽

Masataka Hirose

Keyword(s):

Dielectric Constant ◽

High Resolution ◽

Photoelectron Spectroscopy ◽

Energy Band ◽

High Dielectric Constant ◽

Band Alignment ◽

X Ray ◽

Gate Insulators ◽

High Dielectric

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Location-Optoelectronic Property Correlation in ZnO:Al Thin Film by RF Magnetron Sputtering and Its Photovoltaic Application

Materials ◽

10.3390/ma14216313 ◽

2021 ◽

Vol 14 (21) ◽

pp. 6313

Author(s):

Fang-I Lai ◽

Jui-Fu Yang ◽

Yu-Chao Hsu ◽

Shou-Yi Kuo

Keyword(s):

Thin Film ◽

Photoelectron Spectroscopy ◽

Hall Effect Measurement ◽

Soda Lime ◽

Rf Magnetron Sputtering ◽

Soda Lime Glass ◽

Optoelectronic Property ◽

X Ray ◽

Conductive Films ◽

Azo Thin Film

In this study, a radio-frequency magnetron sputter system was used to deposit Al2O3 doped ZnO (AZO) thin films at room temperature, and the soda lime glass (SLG) substrates were placed at different zones relative to the center of the sample holder under the target. The samples were then analyzed using an X-ray diffractometer, Hall-effect measurement system, UV-visible spectrophotometer, and X-ray photoelectron spectroscopy. It was found that the electrical, structural, and optical properties of AZO films strongly depend on the target racetrack. The AZO thin film grown at a location outside the racetrack not only has the most suitable figure of merit for transparent conductive films, but also retains the least residual stress, which makes it the most suitable candidate for use as a CZTSe transparent conductive layer. When applied to CZTSe solar cells, the photoelectric efficiency is 3.56%.

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