An ON-Current and Effective Drive Current Model for Nanowire MOSFETs with Random Dopant Fluctuations

2020 ◽  
Vol 24 ◽  
pp. 1707-1712
Author(s):  
T.E. Ayoob Khan ◽  
Nisha James Padiyara ◽  
T.A. Shahul Hameed
Keyword(s):  
Current Model ◽  
Drive Current ◽  
Nanowire Mosfets ◽  
Random Dopant Fluctuations ◽  
Random Dopant

An Analytic Surface-Field-Based Quasi-Atomistic Model for Nanowire MOSFETs With Random Dopant Fluctuations

2015 ◽  
Vol 62 (12) ◽  
pp. 4179-4185 ◽  
Author(s):  
Chuyang Hong ◽  
Qi Cheng ◽  
Pu Wang ◽  
Wei Meng ◽  
Libo Yang ◽  
...  
Keyword(s):  
Analytic Surface ◽  
Atomistic Model ◽  
Surface Field ◽  
Nanowire Mosfets ◽  
Random Dopant Fluctuations ◽  
Random Dopant

scholarly journals The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields

2019 ◽  
Author(s):  
Heng-Sheng Huang ◽  
Ping-Ray Huang ◽  
Mu-Chun Wang ◽  
Shuang-Yuan Chen ◽  
Shea-Jue Wang ◽  
...  
Keyword(s):  
Electric Fields ◽  
Current Model ◽  
Atomic Layer ◽  
Diffusion Current ◽  
Electrical Performance ◽  
Short Channel ◽  
Drive Current ◽  
Layer Deposition ◽  
And Diffusion ◽  
Better Than

A novel drive current model covering the effects of source/drain voltage (VDS) and gate voltage (VGS) and incorporating drift and diffusion current on the surface channel at the nano-node level, especially beyond 28nm node is presented. The effect of the diffusion current added is more satisfactory to describe the behavior of the drive current in nano-node MOSFETs, fabricated with the atomic-layer-deposition (ALD) technology. This breakthrough in model establishment can expose the long and short channel devices together. Introducing the variables of VDS and VGS, the mixed current model more effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or mixed electrical field. In comparison between the simulation and experimental consequences, the electrical performance is impressive. The error between both is less than 1%, better than the empirical adjustment to issue a set of drive current models.

Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

2008 ◽  
Vol 7 (3) ◽  
pp. 291-298 ◽  
Author(s):  
E. Baravelli ◽  
M. Jurczak ◽  
N. Speciale ◽  
K. De Meyer ◽  
A. Dixit
Keyword(s):  
Matching Performance ◽  
Random Dopant Fluctuations ◽  
Random Dopant

Variability Effects in Nanowire and Macaroni MOSFETs—Part I: Random Dopant Fluctuations

2020 ◽  
Vol 67 (4) ◽  
pp. 1485-1491 ◽  
Author(s):  
Alessandro S. Spinelli ◽  
Christian Monzio Compagnoni ◽  
Andrea L. Lacaita
Keyword(s):  
Random Dopant Fluctuations ◽  
Random Dopant

Effect of percolation path on temperature dependence of threshold voltage variability in bulk MOSFETs

2021 ◽  
Author(s):  
Tomoko Mizutani ◽  
Kiyoshi Takeuchi ◽  
Takuya Saraya ◽  
Hiroshi Oka ◽  
Takahiro MORI ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Threshold Voltage ◽  
Cryogenic Temperature ◽  
Room Temperature ◽  
Constant Current ◽  
Percolation Path ◽  
Temperature Dependences ◽  
Random Dopant Fluctuations ◽  
Random Dopant

Abstract Threshold voltage variability of bulk MOSFETs was measured at room temperature and cryogenic temperature and compared. It is found that the temperature dependences of threshold voltage defined by extrapolation (VTHEX) and threshold voltage defined by constant current (VTHC) show different behaviors and the percolation path in the channel, which is caused by potential valley due to random dopant fluctuations, weakens the temperature dependence of VTHC.

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