Corrigendum to “Synthesis of gallium oxide nanowires and their electrical properties” [Microelectronic Engineering 85 (2008) 1618–1620]

2010 ◽  
Vol 87 (4) ◽  
pp. 690
Author(s):  
Zijiong Li ◽  
Bin Zhao ◽  
Ping liu ◽  
Yafei Zhang
Keyword(s):  
Electrical Properties ◽  
Gallium Oxide ◽  
Oxide Nanowires

Synthesis of gallium oxide nanowires and their electrical properties

2008 ◽  
Vol 85 (7) ◽  
pp. 1613-1615 ◽  
Author(s):  
Zijiong Li ◽  
Bin Zhao ◽  
Ping Liu ◽  
Yafei Zhang
Keyword(s):  
Electrical Properties ◽  
Gallium Oxide ◽  
Oxide Nanowires

Unconventional Gallium Oxide Nanowires

Small ◽  
2005 ◽  
Vol 1 (8-9) ◽  
pp. 883-888 ◽  
Author(s):  
Jinhua Zhan ◽  
Yoshio Bando ◽  
Junqing Hu ◽  
Fangfang Xu ◽  
Dmitri Golberg
Keyword(s):  
Gallium Oxide ◽  
Oxide Nanowires

Direct synthesis of beta gallium oxide nanowires, nanobelts, nanosheets and nanograsses by microwave plasma

2006 ◽  
Vol 137 (4) ◽  
pp. 177-181 ◽  
Author(s):  
Feng Zhu ◽  
Zhong Xue Yang ◽  
Wei Min Zhou ◽  
Ya Fei Zhang
Keyword(s):  
Gallium Oxide ◽  
Microwave Plasma ◽  
Direct Synthesis ◽  
Oxide Nanowires

Nanoweb Formation: 2D Self-Assembly of Semiconductor Gallium Oxide Nanowires/Nanotubes

2003 ◽  
Vol 13 (7) ◽  
pp. 576-581 ◽  
Author(s):  
U.M. Graham ◽  
S. Sharma ◽  
M.K. Sunkara ◽  
B.H. Davis
Keyword(s):  
Self Assembly ◽  
Gallium Oxide ◽  
Oxide Nanowires

Synthesis and Cathodoluminescence of β-Ga2O3 Nanowires with Holes

2008 ◽  
Vol 8 (3) ◽  
pp. 1284-1287
Author(s):  
Xitian Zhang ◽  
Zhuang Liu ◽  
Suikong Hark
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Chemical Vapor ◽  
Oxide Nanowires ◽  
X Ray ◽  
Transmission Electron ◽  
Reactive Surfaces ◽  
Scanning Electron

Gallium oxide nanowires were synthesized on Si (001) substrate by chemical vapor deposition, using a Ga/Ga2O3 mixture as a precursor and Au as a catalyst. The structure of the as-synthesized products was examined by X-ray powder diffraction and high-resolution transmission electron microscopy, and found to be monoclinic β-Ga2O3. The morphologies of the β-Ga2O3 nanowires were characterized by scanning electron microscopy. The majority of the nanowires contain holes along their length, but a few were also found without holes. The holes are believed to be formed by the reaction of adsorbed Ga droplets on reactive terminating surfaces of the nanowires. For nanowires where these reactive surfaces are not exposed, the reaction of Ga is retarded. Cathodoluminescence (CL) of the nanowires was measured. Three emission bands centered at 376, 454, and 666 nm, respectively, were observed.

Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires

2009 ◽  
Vol 45 (4-5) ◽  
pp. 156-160 ◽  
Author(s):  
E. Nogales ◽  
B. Sánchez ◽  
B. Méndez ◽  
J. Piqueras
Keyword(s):  
Gallium Oxide ◽  
Oxide Nanowires ◽  
Isoelectronic Doping ◽  
Cathodoluminescence Study

Electrical properties of zinc oxide nanowires and intramolecular p–n junctions

2003 ◽  
Vol 83 (15) ◽  
pp. 3168-3170 ◽  
Author(s):  
C. H. Liu ◽  
W. C. Yiu ◽  
F. C. K. Au ◽  
J. X. Ding ◽  
C. S. Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Zinc Oxide Nanowires ◽  
Oxide Nanowires
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