High aspect ratio and low leakage current carbon nanosheets based high-k nanostructure for energy storage applications

2017 ◽  
Vol 169 ◽  
pp. 1-8 ◽  
Author(s):  
Mohammad Qaid ◽  
M.S. Alsalhi
2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.


2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  

2013 ◽  
Vol 1561 ◽  
Author(s):  
Revathy Padmanabhan ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Y. Morozumi ◽  
Sanjeev Kaushal

ABSTRACTMetal-insulator-metal (MIM) capacitors for DRAM applications have been realized using TiO2/ZrO2/TiO2 (TZT) and AlO-doped TZT (TZAZT and TZAZAZT) dielectric stacks. High capacitance densities of about 46.6 fF/μm2 (for TZT stacks), 46.2 fF/μm2 (for TZAZT stacks), and 46.8 fF/μm2 (for TZAZAZT stacks) have been achieved. Low leakage current densities of about 4.9×10−8 A/cm2, 5.5×10−9 A/cm2, and 9.7×10−9 A/cm2 (at -1 V) have been obtained for TZT, TZAZT, and TZAZAZT stacks, respectively. We analyze the leakage current mechanisms at different electric field regimes, and compute the barrier heights. The effects of constant current stress and constant voltage stress on the device characteristics are studied, and excellent device reliability is demonstrated. We compare the device performance of the fabricated capacitors with other stacked high-k MIM capacitors reported in recent literature.


2003 ◽  
Vol 39 (8) ◽  
pp. 692 ◽  
Author(s):  
C.W. Yang ◽  
Y.K. Fang ◽  
S.F. Chen ◽  
M.F. Wang ◽  
T.H. Hou ◽  
...  

2019 ◽  
Vol 40 (4) ◽  
pp. 502-505 ◽  
Author(s):  
Tae In Lee ◽  
Hyun Jun Ahn ◽  
Min Ju Kim ◽  
Eui Joong Shin ◽  
Seung Hwan Lee ◽  
...  

2004 ◽  
Vol 22 (1) ◽  
pp. 182-184 ◽  
Author(s):  
Xiang Wen-Feng ◽  
Lu Hui-Bin ◽  
Chen Zheng-Hao ◽  
He Meng ◽  
Lu Xu-Bing ◽  
...  

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie

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